Frequency Influence on the Hot-Electron Noise Reduction in GaAs Operating under Periodic Signals

Abstract

A Monte Carlo study of the role of the frequency on the hot-electron intrinsic noise reduction in an n-type GaAs bulk driven by two mixed cyclostationary electric fields is presented. Previous numerical results showed the possibility to reduce the diffusion noise under specific wave-mixing conditions. In this work the variations of the noise properties are investigated by computing and integrating the spectral density of the velocity fluctuations. We found that the effect of reduction of the noise level due to the addition of a second field at twice frequency is almost independent of the frequency.

Noise-induced resonance-like phenomena in InP crystals embedded in fluctuating electric fields

“…The electron velocity fluctuations of hot electrons, moving inside semiconductors structures owing to static or oscillating voltages, have been extensively investigated during recent decades as the growing miniaturization process of microelectronic components causes charge carriers to be driven by increasingly intense electric fields and exhibit a highly nonlinear response [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18].…”