2012
DOI: 10.1016/s0034-4877(12)60037-8
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External Noise Effects in Doped Semiconductors Operating Under sub-THz Signals

Abstract: We study the noise-induced effects on the electron transport dynamics in low-doped n-type GaAs samples by using a Monte Carlo approach. The system is driven by an external periodic electric field in the presence of a random telegraph noise source. The modifications caused by the addition of external fluctuations are investigated by studying the spectral density of the electron velocity fluctuations for different values of the noise parameters. The findings indicate that the diffusion noise in low-doped semicon… Show more

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Cited by 22 publications
(18 citation statements)
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(21 reference statements)
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“…Noise enhanced stability [46][47][48] in the electron transport inside GaAs bulks, caused by the addition of external fluctuations to the driving oscillating electric field, has been reported in Refs. [49][50][51]. Recently, in semiconductor quantum wells and quantum wires the possibility of exploiting random Rashba spin−orbit interaction to generate spin currents has been found [52].…”
Section: Spin Polarised Transportmentioning
confidence: 99%
“…Noise enhanced stability [46][47][48] in the electron transport inside GaAs bulks, caused by the addition of external fluctuations to the driving oscillating electric field, has been reported in Refs. [49][50][51]. Recently, in semiconductor quantum wells and quantum wires the possibility of exploiting random Rashba spin−orbit interaction to generate spin currents has been found [52].…”
Section: Spin Polarised Transportmentioning
confidence: 99%
“…A similar approach to model the dichotomous noise source was previously implemented and used in other contexts, from generalized Lotka-Volterra systems [124][125][126][127] to electron transport dynamics in GaAs samples [41]. Equation (7) is numerically solved within the Ito scheme by setting ∆t = ∆x = 0.05.…”
Section: Long Jj-the Modelmentioning
confidence: 99%
“…This counterintuitive effect has been found in different physical areas, ranging from the generation of spin currents [29], aggregation kinetics of Brownian particles [30,31], chemical reaction system [32], translocation dynamics of polymers [33][34][35], ultra-fast magnetization dynamics of magnetic spin systems [36,37], dynamic electron response in zinc-blende semiconductor crystals [38][39][40][41][42][43], noise redistribution in quasi 2D Silicon Mos inversion layers [44], to interdisciplinary physical models [45][46][47][48][49][50][51][52].…”
Section: Introductionmentioning
confidence: 99%
“…For a delay time greater than T DN , where T DN = 2π/ω DN , we observe a synchronization between the jumps and the periodicity of the rate γ DN (t). A similar approach to model the dichotomous noise source was previously implemented and used in other contexts, from a Lotka-Volterra system of two [51,52] or more [53,54] competing species to electron transport dynamics in Gallium arsenide (GaAs) samples [55]. Equation (1) is numerically solved within the Ito scheme.…”
Section: The Modelmentioning
confidence: 99%