Frequency‐Dependent Relaxation Time of Electrons in PbSe from Infrared Measurements

Mycielski, A.; Aziza, A.; Mycielski, Jan; Bałkanski, M.

doi:10.1002/pssb.2220650234

Cited by 23 publications

(3 citation statements)

References 17 publications

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“…As concerns the shape of the LO branch near the zone centre, the free-carrier (in this case free holes) screening of the long-range electric field of the LO phonons is suspected to be responsible for the difference between the optical data and the neutron data on HgTe. In order to obtain the value of the Debye-Huckel screening radius we use the expression [12] given in eq. ( 1) to describe the shape of the LO branch when the effects of free-carrier screening exist [ 121:…”

Section: Resultsmentioning

confidence: 99%

A Neutron Scattering Study of Lattice Dynamics of HgTe and HgSe

et al. 1982

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The dispersion relations for the acoustic and optic phonons in HgTe and for the acoustic phonons in HgSe were determined by neutron inelastic scattering in three high symmetry directions. The effect of the free-carrier screening of the long-range electric field of LO phonons in HgTe was observed. The formalism of the rigid ion model is used for numerical calculations of the phonon dispersion relations and the phonon densities of states in HgTe and HgSe.

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Section: Resultsmentioning

confidence: 99%

A Neutron Scattering Study of Lattice Dynamics of HgTe and HgSe

et al. 1982

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“…Using the expansion of the function f(W, 7c) of the forni f ( k ' , k) = fo(k', k) + A/@', k) 3 we could approximately express the step functions E in (1.3.15) in the following forms:…”

Section: Appendixmentioning

confidence: 99%

Free‐Carrier Absorption in n‐PbSe at Low Temperatures Due to Electron–Electron Scattering

Huong

1983

Physica Status Solidi (b)

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Free-carrier absorption due to electron-electron interaction in strongly degenerate n-PbSe is calculated using the theory developed in a previous paper. This theory is specified for the case of weakly anisotropic conduction band. Numerical results for the free-carrier absorption are compared with those corresponding to other electron scattering processes, and with experimental data on this material a t 30 K.Die Absorption an freien Ladungstragern, hervorgerufen durch Elektron-Elektron-Wechselwirkung im stark entarteten n-PbSe, wird entsprechend der in der letzten Arbeit entwickelten Theorie berechnet. Diese Theorie wird fur den Fall eines schwach anisotropen Leitungsbandes spezifiziert. Die numerischen Ergebnisse der Absorption a n freien Lzdwngstragern werden vergliechne mit den Ergebnissen anderer Prozesse der Elektronenstreuung und mit experimentellen Ergebnissen a n diesem Material bei 30 K.

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“…Infrared magnetoreflectivity measurements on strongly degenerate n-type PbSe [3,4] were interpreted according to the theory of Wallace et al [lo].…”

Section: Introductionmentioning

confidence: 99%

Theory of free‐carrier absorption in n‐PbSe

Szymáski

1975

Physica Status Solidi (b)

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Theory of Free-Carrier Absorption in n-PbSe l) J. S Z Y M A~S K IFree-carrier absorption is calculated for n-type PbSe using the model of a nonparabolic, nonspherical, and multivalley conduction band. New scattering mechanisms of the electron in PbSe-like structure (two-band deformation potential for optical phonons and twooptical-phonon deformation potential) are considered in order t o explain the recent experimental data on n-PbSe.L'absorption par les porteurs libres est calcul6e pour n-PbSe utilisant le modele de la bande de conduction Zt plusieurs vallbes nonspheriques et nonparaboliques. Ppur expliquer les exphriences pour n-PbSe on considhe des nouveaux processus de diffusion des porteurs libres diis aux interactions nonpolaires des 6lectrons avec les phonons optiques. l) This work was supported by the Institute of Physics of the Polish Academy of Sciences. a) Of course, t(w) does not depend, by definition, on the electron energy and exists even if the relaxation time approximation for Boltzmann equation does not hold.

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Frequency‐Dependent Relaxation Time of Electrons in PbSe from Infrared Measurements

Cited by 23 publications

References 17 publications

A Neutron Scattering Study of Lattice Dynamics of HgTe and HgSe

A Neutron Scattering Study of Lattice Dynamics of HgTe and HgSe

Free‐Carrier Absorption in n‐PbSe at Low Temperatures Due to Electron–Electron Scattering

Theory of free‐carrier absorption in n‐PbSe

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