Frequency dependent electrical characteristics of BiFeO3 MOS capacitors

Kaya, Şenol; Lök, Ramazan; Aktağ, Aliekber; Seidel, Jan; Yılmaz, Ercan

doi:10.1016/j.jallcom.2013.08.204

Cited by 48 publications

(28 citation statements)

References 27 publications

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“…Capacitance increases while conductance decreases after corrections. These behaviors demonstrate that the series resistances were masking the real C-V and G/ω-V characteristics and the peaks in the corresponding depletion edge give an evidence on the interaction between interface states and majority carriers of semiconductors [15,16]. …”

Section: Resultsmentioning

confidence: 84%

Influences of irradiation on the C–V and G/ ω –V characteristics of Si3N4 MIS capacitors

YILMAZ¹

2015

Journal of Nuclear Sciences

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The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride (Si 3 N 4 ) metal-insulatorsemiconductor (MIS) structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C-V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si 3 N 4 MIS structures.

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Section: Resultsmentioning

confidence: 84%

Influences of irradiation on the C–V and G/ ω –V characteristics of Si3N4 MIS capacitors

YILMAZ¹

2015

Journal of Nuclear Sciences

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“…Interface states capacitance may contribute the measure capacitance at low frequencies. Hence, total measured capacitance is higher than bare capacitance [28,39]. If the measurements are performed at sufficiently high frequencies, the interface state charges cannot follow the voltage signal, and do not contribute to the measured capacitance.…”

Section: Resultsmentioning

confidence: 97%

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

Kaya

Yılmaz

2014

J Radioanal Nucl Chem

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Effects of gamma-ray irradiation on the electrical characteristics of Al 2 O 3 MOS capacitors such as barrier height, acceptor concentration, series resistance and interface state parameters have been studied by analyzing capacitance-voltage (C-V) and conductance-voltage (G/ x-V) measurements. The fabricated MOS capacitors were irradiated with gamma-rays at doses up to five grays. C-V and G/x-V measurements were recorded prior to and after irradiation at high frequency. The results show that the measured capacitance and conductance values decreased with increasing in irradiation dose and C-V and G/x curves has been shifted toward the negative voltages. Moreover, the series resistance (R s ) and density of interface states increased with increasing in irradiation dose and density of interface states (D it ) were calculated as order of 10 12 eV -1 cm -2 prior to and after irradiation. Due to presence and variations in the R s values, the corrected and the measured C-V and G/x-V exhibited different behaviors. Therefore other electrical characteristics were assessed from corrected C c characteristics. It was observed that acceptor concentration decreased with increasing in barrier height of device due to changes in interface states and diffusion potential.

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“…The measured capacitance can be explained by equivalent circuit as seen in Fig. 6 [33,34]. In the circuit, C ox , C sc , C it , and R s are the oxide capacitance, space charge capacitance, interface states capacitance and series resistance, respectively.…”

Section: Frequency Dependency Of Series Resistance and Interface Statmentioning

confidence: 99%

“…It can be clearly seen that the location of the peak of the R s -voltage curves varies with applied voltage frequency. This behaviour of R s peak can be explained with the voltage dependent charges such as fixed oxide charge, interface charge, oxide trapped charge, and mobile oxide charge [33,34]. Moreover, R s values take the values close to each other at high frequencies (f C 500 kHz) due to the trapped charges, which gain enough energy to escape from the traps located to the Si band between metal and semiconductor interface [34].…”

Section: Frequency Dependency Of Series Resistance and Interface Statmentioning

confidence: 99%

Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors

Kahraman

Yılmaz

Kaya³

et al. 2015

J Mater Sci: Mater Electron

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The purposes of this paper are to investigate the post deposition annealing (PDA) effect on structural and electrical characterizations of HfO 2 MOS capacitor and the frequency dependency of series resistance and interface states in this device. PDA processes on the HfO 2 films deposited using RF magnetron sputtering system were performed in N 2 ambient at 350, 550, 650, and 750°C. The phase identifications and crystallization degrees of the HfO 2 films were determined by using X-ray diffractometry. The grain size of the films was varied from 4.5 to 15.23 with increasing in PDA temperature. The HfO 2 MOS capacitors were fabricated using the as-deposited and annealed films for electrical characterization. C-V and G/ x-V measurements were performed at 1 MHz frequency. The C-V characteristics of the MOS capacitor fabricated with film annealed at 550°C show a better behaviour in terms of the high dielectric constant and low effective oxide charge compared to others. For this device, C-V and G/x-V measurements were performed in different frequencies ranging from 10 kHz to 1 MHz at room temperature. Obtained results show that series resistance and interface states strongly influence the C-V and G/x-V behaviour of the MOS capacitor.

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Frequency dependent electrical characteristics of BiFeO3 MOS capacitors

Cited by 48 publications

References 27 publications

Influences of irradiation on the C–V and G/ ω –V characteristics of Si3N4 MIS capacitors

Influences of irradiation on the C–V and G/ ω –V characteristics of Si3N4 MIS capacitors

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors

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