Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors

Abstract

Abstract-It is essential to acquire an accurate and simple technique for extracting the interface trap density (D it ) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting D it and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and biasdependent capacitance components.Index Terms-normally-off, gate-recessed, AlGaN/GaN HFETs, interface trap density, frequency-dependent C-V.

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

“…In particular, the electrical characteristics such as capacitance-voltage ( C-V ) frequency dispersion and its dependence on interface states density18 ( D it ) which influence the carrier transport properties deserve a further investigation. Apart from the mobility and on/off ratio, high D it could also degrade the performance of transistor in terms of response time, traps effect on current transient, subthreshold swing and low frequency noise1920. For methods including mechanical exfoliation (ME), CVD and thermal evaporation, the atomic defects in MoS 2 monolayer have been systematically investigated by J. Hong et al 21…”