2009
DOI: 10.1016/j.tsf.2009.07.110
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Frequency analysis on poly(3-hexylthiopene) rectifier using impedance spectroscopy

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Cited by 25 publications
(20 citation statements)
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“…This value is comparable to the values of 4.4 Â 10 -2 and 2 Â 10 -1 cm 2 V -1 s -1 reported for the trap-free mobility of holes in P3HT derived from FET 9 and TOF 18 experiments, respectively. In general, reported hole mobilities for P3HT ranges between 2 Â 10 -1 and 1 Â10 -4 cm 2 V -1 s -1 , whether measured by FET, 12,16,21,37 TOF, 10,18,23 SCLC,7 or pulse radiolysis TRMC. 8,9 The trap distribution parameter observed here is consistent with that observed in P3HT/PCBM devices; however, the hole mobilities here are higher due to observation at higher charge concentrations.…”
mentioning
confidence: 99%
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“…This value is comparable to the values of 4.4 Â 10 -2 and 2 Â 10 -1 cm 2 V -1 s -1 reported for the trap-free mobility of holes in P3HT derived from FET 9 and TOF 18 experiments, respectively. In general, reported hole mobilities for P3HT ranges between 2 Â 10 -1 and 1 Â10 -4 cm 2 V -1 s -1 , whether measured by FET, 12,16,21,37 TOF, 10,18,23 SCLC,7 or pulse radiolysis TRMC. 8,9 The trap distribution parameter observed here is consistent with that observed in P3HT/PCBM devices; however, the hole mobilities here are higher due to observation at higher charge concentrations.…”
mentioning
confidence: 99%
“…For example, not only are high μ values required for the efficient collection of charge in polymer photovoltaics, but hole mobility limits the frequency response of organic transistors. 7 There are many approaches available to measure μ, each with inherent difficulties and limitations. For example, timeof-flight (TOF), field-effect transistors (FET) measurements, and space-charge-limited conduction (SCLC) are measured on devices and will thus include effects of processes that occur at the electrode interfaces.…”
mentioning
confidence: 99%
“…The hole mobilities can be measured precisely by fitting the dark JeV curves for single carrier devices to the SCLC model at low voltages. Here, the current is given by J ¼ 9ε 0 ε r mV 2 /8L 3 , where ε 0 ε r is the permittivity of the polymer, m is the carrier mobility, and L is the device thickness [18]. For the device without AN, the calculated hole mobility is 2.0 Â 10 À4 cm 2 /V s whereas the calculated hole mobility for the device with AN decreased by about a factor of two to 9.0 Â 10 À5 cm 2 /V s. The mobility results obtained from the SCLC analysis are exactly opposite the results obtained from the FET devices.…”
Section: Resultsmentioning
confidence: 99%
“…R s demonstrated the contact resistance conceivably developed from the anode electrode (ITO), Since the value of L s is minimal (order of 10 − 18 ), the contribution of L s can be neglected, and the value of R s can be extracted at relatively high frequency (about 1 MHz) [66,67]. We can attribute the R 1 -C 1 and R 2 -C 2 components to the NRI bulk layer and NRI/Al junction, respectively [68]. Extracted values of the equivalent circuit elements are tabulated (Table 6).…”
Section: Equivalent Circuit Model Of Nri Devicementioning
confidence: 99%
“…Our group [20] extracted the mobility of iodine doped natural rubber using J-V analysis with the help of trap-free SCLC formula [21]. However, the mobility obtained using this method always smaller than the actual bulk mobility of the semiconductor [22]. Finally, electrochemical impedance spectroscopy (EIS) is found as the ideal tool to describe the charge carrier transport inside an organic layer sandwiched between anode and cathode electrodes, and it is valid for thin films also.…”
Section: Introductionmentioning
confidence: 99%