Freestanding patterned polycrystalline GaN substrate by a straightforward and affordable technique

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

“…Electroless wet etching is also a promising approach, but it oen requires processing and post-processing of the samples using toxic substances at high concentrations, such as hydrouoric and nitric acids. 26,27 Photoelectrochemical (PEC) wet etching is one of the most studied methods of III-nitride porosication due to its precise process control and eco-friendly equipment. However, problems may appear in larger scale production of porous IIInitrides, such as the need for uniform ultraviolet illumination of bigger samples.…”

Ta-Doped Ga2O3 Epitaxial Films on Porous p-GaN Substrates: Structure and Self-Powered Solar-Blind Photodetectors

“…According to the transformation of the grain shape as exhibited in Figure 3, the hexagonal pores served as the molds and play a guiding role during the growth of Ga 2 O 3 . 18 The porous structures are formed by the decomposition of GaN molecules at the defects, 19,20 leading to a decrease in the defect density, so there are fewer threading dislocations (TDs) that continue into the Ga 2 O 3 film on the porous substrate compared with that on the nonporous substrate. Furthermore, the porous substrate can be used as a template for the epitaxial lateral overgrowth, resulting in the formation of stacking faults (SFs) in the lower part of the Ga 2 O 3 overgrowth layer.…”

“…It can be concluded in Figures and that the high porosity on the substrate can significantly ameliorate the lattice quality of the samples. According to the transformation of the grain shape as exhibited in Figure , the hexagonal pores served as the molds and play a guiding role during the growth of Ga 2 O 3 . The porous structures are formed by the decomposition of GaN molecules at the defects, , leading to a decrease in the defect density, so there are fewer threading dislocations (TDs) that continue into the Ga 2 O 3 film on the porous substrate compared with that on the nonporous substrate.…”

Метод управления полярностью слоев GaN при эпитаксиальном синтезе GaN/AlN гетероструктур на гибридных подложках SiC/Si

“…Решению этой проблемы в настоящее время уделяется огромное внимание. Большое внимание уделяется и проблеме отделения синтезированных эпитаксиальных объемных слоев GaN от упомянутых выше сильно рассогласованных с GaN по параметрам решеток подложек [5][6][7][8]. Следует отметить, что преимущество использования для эпитаксии объемных слоев GaN подложек кремния обусловлено экономической доступностью пластин монокристаллического кремния высокого качества с диа-метром вплоть до 450 mm о которой было указано выше, отсутствием полярности у подложек Si, что позволяет выращивать на них как Ga-, так и N-полярные слои GaN [9], а также возможностью отделения слоев GaN [8].…”