Free radical fast photo-cured gate dielectric for top-gate polymer field effect transistors

Fahem, Zied; Bauhofer, W.

doi:10.1016/j.orgel.2012.04.011

Cited by 8 publications

(5 citation statements)

References 22 publications

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“…Fahem et al have reported free radical photocured acrylate/epoxy polymers as gate dielectrics. 247 Thus, an acrylate oligomer (polyQ 9300) and two epoxy acrylate monomers [bisphenol A diglycidylether diacrylate (BDGDA) and ethoxylated (3) bisphenol A diacrylate (BEODA)] were UV cross-linked (16 mW cm −2 ) within 1 min using 4-phenylbenzophenone (PBT) as photoinitiator. Figure 37a gives the chemical structures of BDGDA and BEODA.…”

Section: Polymer Dielectricsmentioning

confidence: 99%

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High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

et al. 2018

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Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.

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Section: Polymer Dielectricsmentioning

confidence: 99%

Section: High-k Dielectric Materialsmentioning

confidence: 99%

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

et al. 2018

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“…From Figure a, the unit capacitance of TP and TP–CN was measured to be 11.5 and 11.6 nF/cm 2 , respectively, which was not excellent capacitance levels at 100 Hz. However, the dielectric constant (6.8 and 8.6, respectively) of the TP and TP–CN copolymers was higher than the dielectric constant ( k = 5–7) of most organic dielectric materials reported in some literatures. ,,, The 5-CTPM monomer unit in the copolymer film contains a highly polar cyano group (−CN), which is beneficial to the increase of the dielectric constant of the copolymer film. Meanwhile, one of important concerns regarding any gate insulators is gate leakage.…”

Section: Resultsmentioning

confidence: 73%

“…However, the dielectric constant (6.8 and 8.6, respectively) of the TP and TP−CN copolymers was higher than the dielectric constant (k = 5−7) of most organic dielectric materials reported in some literatures. 8,27,33,34 The 5-CTPM monomer unit in the copolymer film contains a highly polar cyano group (−CN), which is beneficial to the increase of the dielectric constant of the copolymer film.…”

Section: ■ Introductionmentioning

confidence: 99%

Development of High-k Polymer Materials for Use as a Dielectric Layer in the Organic Thin-Film Transistors

et al. 2019

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In this article, we developed a series of novel high dielectric polymers based on 5-TPM-co-HEMA-co-GMA (TP) and 5-CTPM-co-HEMA-co-GMA (TP−CN) containing alkylated terphenyl and alkylated terphenyl with a cyano group, respectively. These organic insulating materials provide smooth surface topographies, lower leakage current densities (<6 × 10 −7 A/cm 2 at 2 MV/m), and small dielectric loss (<0.02, 10 3 to 10 5 Hz), which display excellent insulating properties. Simultaneously, two kinds of polymer films have higher dielectric constants of 6.8 and 8.6 than other dielectric constants reported in some literatures and most commercial organic dielectric materials. To investigate the potential of TP and TP−CN as gate dielectrics, we successfully prepared bottom-gate top-contact organic thin-film transistors, with para-hexaphenyl (p-6P) as the buffer layer and vanadyl phthalocyanine (VOPc) as the active layer, which yields a higher charge carrier mobility of 0.52 cm 2 V −1 s −1 and on/off ratio > 10 4 .

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“…These UV cross‐linked PVA exhibited improved electrical insulation properties (reduced leakage current), but a slightly reduced dielectric constant just as reported by previous studies. [ 7,8,49,50 ] The measured capacitances of the pristine PVA and UV cross‐linked PVA layers were 88.2 and 55.5 nF cm −2 at 100 kHz, respectively, and the dielectric constant also decreased slightly from 10.2 to 5.8. On the other hand, the areal capacitance of the 1100 nm TiO 2 NS‐PVA nanocomposite layer was 34.2 nF cm −2 at 100 kHz, which leads to a calculated dielectric constant of 43.2 (note the difference in the dielectric thicknesses of PVA, UV cross‐linked PVA, and TiO 2 NS‐PVA nanocomposite for dielectric constant calculation).…”

Section: Resultsmentioning

confidence: 99%

Strategic Customization of Polymeric Nanocomposites Modified by 2D Titanium Oxide Nanosheet for High‐k and Flexible Gate Dielectrics

Jang

Park

Kim

et al. 2021

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Organic polymer‐based dielectrics with intrinsic mechanical flexibility and good processability are excellent candidates for the dielectric layer of flexible electronics. These polymer films can become even more rigid and electrically robust when modified through cross‐linking processes. Moreover, the composites formed by dispersing nanoscale inorganic fillers in a polymer matrix can exhibit further improved polarization property. However, these strategies can be challenging as homogeneous dispersion of nanomaterials in the matrix is difficult to achieve; thus, degradation of electrically insulating properties of nanocomposite layers is often observed. Here, a high‐k, pinhole‐free, and flexible poly(vinyl alcohol) (PVA)‐based nanocomposite dielectric is presented, incorporating 2D TiO2 nanosheets (NSs) for the first time. Despite the attractive dielectric constant, exceptional flexibility, and electrically insulating property of PVA‐TiO2 nanocomposites, only few studies on these materials have been reported. The organic/inorganic nanosheet hybrid layer, which reaches an unprecedentedly high dielectric constant of 43.8 (more than four times higher than that of cross‐linked PVA), also exhibits an outstanding leakage current density as low as 10−9 A cm−2. Furthermore, the repeated bending tests for nanocomposite capacitors reveal their capability of operating without any deterioration of their performances even after 1000 iterations of bending cycles at a bending radius of 3 mm.

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Free radical fast photo-cured gate dielectric for top-gate polymer field effect transistors

Cited by 8 publications

References 22 publications

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

Development of High-k Polymer Materials for Use as a Dielectric Layer in the Organic Thin-Film Transistors

Strategic Customization of Polymeric Nanocomposites Modified by 2D Titanium Oxide Nanosheet for High‐k and Flexible Gate Dielectrics

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