Abstract:Integral equations are derived which describe free molecular flow and simultaneous film deposition in long rectangular trenches. The equations apply to flow in the absence of deposition and to both low-pressure chemical vapor deposition (LPCVD) and physical vapor deposition (PVD), i.e., over the full range of reactant sticking coefficient from zero to unity. A steady-state assumption is implicit in the formulation. In the absence of film deposition, the flux to the surface is spatially uniform. Analytical expr… Show more
“…Free molecular flows at high Knudsen conditions ðKn410Þ can be modeled through line-of-sight-type models [57,179,180]. For the intermediate pressure ðKn ¼ 0:01210Þ ranges, neither of the approaches is suitable.…”
Section: Rarefaction Effects In Very Low Pressure Deposition Processesmentioning
“…Free molecular flows at high Knudsen conditions ðKn410Þ can be modeled through line-of-sight-type models [57,179,180]. For the intermediate pressure ðKn ¼ 0:01210Þ ranges, neither of the approaches is suitable.…”
Section: Rarefaction Effects In Very Low Pressure Deposition Processesmentioning
“…[3] However, the use of local sticking factors increases the computational cost due to the iterative process by which a converged solution for the reaction-dependant surface fluxes is reached. This additional cost increases with aspect ratio and decreases with increased sticking factors.…”
Section: Application To Non-first Order Chemistrymentioning
confidence: 99%
“…The three models are the simplified hemispherical vapor source (HVS) model developed by Yun and Rhee, [1] the ballistic transport and reaction model (BTRM) of Cale and co-workers., [2][3][4] and the Monte Carlo (MC) method used by Rodgers and Jensen. [5] The goal of developing this new model, called the ballistic transport with local sticking factors (BTLSF) model, was to produce a simple but accurate ballistic transport-based feature-scale model where the initial deposition arrives from a source plane.…”
A simple feature-scale model is developed to simulate the low pressure (LP)CVD process. The direct deposition for this model is modeled as arriving from a source plane. A line-of-sight model and cylindrical co-ordinates are used to form an analytical equation to describe the direct flux of particles arriving from the source plane. The use of a source plane allows for easier linking in multiscale simulations through the use of effective reactivity maps. A method of automatically adjusting the time increment to decrease the number of time steps required to accurately simulate the deposition process is also introduced.
“…The method uses ÔpropagatingÕ directions for tracking the transport of particles throughout phase space. This transport model is similar in spirit to earlier transition probability transport codes [9,[11][12][13][14][15]. Although earlier codes [13,14] are capable of handling arbitrary spatial meshes, they typically assume isotropic scattering and make other simplifying assumptions which reduce the computational overhead, making it possible to store large amounts of geometrical information typically needed.…”
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