Free-carrier absorption modulation in silicon nanocrystal slot waveguides

Creazzo, Tim; Redding, Brandon; Marchena, Elton; Shi, Shouyuan; Prather, Dennis W.

doi:10.1364/ol.35.003691

Cited by 27 publications

(17 citation statements)

References 14 publications

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“…Marchena et al demonstrated the FCA induced loss in the Si-QD based micro-disk at resonant frequency by optical pumping [23]. With the FCA effect in Si-QD doped SiO x waveguide modulator, the all-optical switching was performed by employing a pulsed pump laser to control the transient free-carrier density so as to rapidly modulate the probe signal passing through the Si-QD [24][25][26]. In principle, the FCA cross-section of the Si-QD can be affected by the QCE, such that the free carrier lifetime as well as the FCA modulation bandwidth can be manipulated by controlling the size of the Si-QD.…”

Section: Introductionmentioning

confidence: 99%

All-Optical Cross-Absorption-Modulation Based Gb/s Switching With Silicon Quantum Dots

Huang

Cheng

et al. 2016

IEEE J. Select. Topics Quantum Electron.

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In silicon quantum dots (Si-QDs), the sub-bandgap cross-absorption-modulation (XAM) has been preliminarily observed and confirmed as a new kind of wavelength conversion process to enable ultrafast optical switching. By using the Si-QD doped Si-rich SiC x micro-ring resonator waveguide with a quality factor of 1.710 4 under an optimized gap spacing of 700 nm away from the bus waveguide, the XAM effect induces a wavelength-converted picosecond all-optical switching between pump and probe signals, which is attributed to a specific free-carrier absorption at probe wavelength caused by the two-photon-absorption induced carriers. The non-degenerate pump-probe analysis also shows a weak Kerr nonlinearity related ultrafast switching response from the changing envelope of the XAM probe pulse at red-shifted wavelength. These observations declare that the nano-scale Si-QDs can provide sufficiently large XAM effect to enable the ultrafast all-optical switching capability for pulsed optical logic applications. To confirm, the Si-QDs doped Si-rich SiC x waveguide modulator based 1.2 Gbit/s all-optical format inversion of a PRZ-OOK data-stream is demonstrated for the first time.

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Section: Introductionmentioning

confidence: 99%

All-Optical Cross-Absorption-Modulation Based Gb/s Switching With Silicon Quantum Dots

Huang

Cheng

et al. 2016

IEEE J. Select. Topics Quantum Electron.

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“…Versatile passive and functional devices including couplers, multiplexers and demultiplexers, resonators, filters, and modulators have been emerged to meet the demands of the next-generation photonic integrated circuits. To fabricate a Si-based modulator with high modulation depth, several kinds of Si-based micro-or nano-structures, including rib/slot waveguide [1][2][3][4][5], nano-wire [6][7][8] and ring-resonator [9] were developed with mature fabrication technology in current Si industry. Recently, Si quantum dot (Si-QD) has been studied in several applications of silicon photonics, such as light emitting diodes (LEDs), distributed Bragg reflectors, waveguide amplifiers, modulator and switch, etc.…”

Section: Introductionmentioning

confidence: 99%

“…However, the optical gain of Si-QDs is still lower than that of III-V compound semiconductor materials, which results from the gain saturation effect of the Si-QDs [26][27][28]. More recently, free-carrier absorption (FCA) of the Si-QDs has also been investigated [1,3]. In 2009, Kekatpure et al have shown that the FCA cross-section in Si-QDs is one-order of magnitude larger than that in bulk Si [28].…”

Section: Introductionmentioning

confidence: 99%

All-Optical Modulation in Si Quantum Dot-Doped SiO Micro-Ring Waveguide Resonator

Lin

2016

IEEE J. Select. Topics Quantum Electron.

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The Si quantum dot doped SiO x rib waveguide based free-carrier absorption modulator with enhanced all-optical modulation depth is demonstrated by integrating with a micro-ring waveguide resonator. The micro-ring waveguide resonator with a Q-factor of 6x10 3 induces a throughput transfer function in wavelength domain, such a transmittance notch can be blue-shifted by varying the excited free-carrier density of Si-QD. When injecting the continuous-wave probe at central wavelength of the transmittance notch, the probe signal can be inversely modulated by optically pumping the micro-ring waveguide resonator to blue-shift the notch away from its original wavelength. By optimizing the pump wavelengths, the largest free-carrier absorption (FCA) loss and highest free-carrier density can be enhanced to 2.9 cm -1 and 7.83×10 16 cm -3 , respectively. With the excited free-carrier density of ~1.3×10 16 cm -3 inside the micro-ring waveguide, the maximal wavelength of the transmittance notch can be blue-shifted by 0.033 nm. The optical pumping also induces the broadened linewidth of transmittance notch from 0.25 to 0.27 nm. With the integrated micro-ring waveguide resonator, the all-optical modulation depth can be further enhanced from 52.5% to 63.5% by shifting the notched transmission spectrum of the micro-ring waveguide with the excited free-carrier density of Si-QD at probe wavelength of 1563.5 nm.Index Terms-Si quantum dots, free-carrier absorption, ring waveguide resonator, data inverter. 1077-260X (c)

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“…Plasma waves can be detected by the measurement of the periodical component of the intensity of the IR radiation of the samples, in a PTR method, or by the measurement of the intensity of the periodical component of the transmitted probing IR beam of light in a MFCA method, or by the periodical photoluminescence in a photocarrier radiometry (PCR) method [1][2][3]. Analysis of the frequency characteristics enables determination of the recombination parameters of semiconductors with the PTR method [4,5] and the MFCA method [6][7][8][9][10][11][12]. For one layer samples, it is possible to determine the lifetime of carriers and the velocity of the surface recombination from the frequency amplitude and phase PTR or MFCA characteristics.…”

Section: Introductionmentioning

confidence: 99%

Monitoring of amorfization of the oxygen implanted layers in silicon wafers using photothermal radiometry and modulated free carrier absorption methods

et al. 2014

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This paper presents experimental results that characterize implanted layers in silicon being the result of a high energy implantation of O ?6 ions. We propose a simple relation between attenuation of photothermal radiometry and/ or modulated free carrier absorption amplitudes, the implanted layer thickness and its optical absorption coefficient. The thickness of the implanted layers was determined from capacitance-voltage characteristics and computations with the TRIM program. The obtained results allowed to estimate changes of the optical absorption coefficient of the oxygen implanted layers indicating the amorfization of the layers.

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Free-carrier absorption modulation in silicon nanocrystal slot waveguides

Cited by 27 publications

References 14 publications

All-Optical Cross-Absorption-Modulation Based Gb/s Switching With Silicon Quantum Dots

All-Optical Cross-Absorption-Modulation Based Gb/s Switching With Silicon Quantum Dots

All-Optical Modulation in Si Quantum Dot-Doped SiO Micro-Ring Waveguide Resonator

Monitoring of amorfization of the oxygen implanted layers in silicon wafers using photothermal radiometry and modulated free carrier absorption methods

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