Free Carrier Absorption in Silicon

Schroder, D. K.; Thomas, R.N.; Swartz, J. C.

doi:10.1109/jssc.1978.1051012

Cited by 159 publications

(110 citation statements)

References 11 publications

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“…For n-Si, K n 10 18 cm 2 =m 2 , and for p-Si K p .2 -2:7/ 10 18 cm 2 =m 2 holds [46]. An equivalent equation holds for p-type material.…”

Section: Carrier Density Imagingmentioning

confidence: 97%

“…, with n D p and m e and m h being the effective masses of electrons and holes, yields the dependence of the free carrier absorption on the modulated excess minority carrier density n. Schroder et al [46] found experimentally a fair agreement of (2.49) and the absorption coefficients for silicon at room temperature. From (2.49) we note that, in principle, a camera detecting at longer wavelength is of advantage.…”

Section: Carrier Density Imagingmentioning

confidence: 99%

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Lock-in Thermography

Breitenstein

Warta

Langenkamp³

2010

Springer Series in Advanced Microelectronics

279

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The Springer Series in Advanced Microelectronics provides systematic information on all the topics relevant for the design, processing, and manufacturing of microelectronic devices. The books, each prepared by leading researchers or engineers in their f ields, cover the basic and advanced aspects of topics such as wafer processing, materials, device design, device technologies, circuit design, VLSI implementation, and subsystem technology. The series forms a bridge between physics and engineering and the volumes will appeal to practicing engineers as well as research scientists.Please view available titles in Springer Series in Advanced Microelectronics on series homepage

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“…For n-Si, K n 10 18 cm 2 =m 2 , and for p-Si K p .2 -2:7/ 10 18 cm 2 =m 2 holds [46]. An equivalent equation holds for p-type material.…”

Section: Carrier Density Imagingmentioning

confidence: 97%

Section: Carrier Density Imagingmentioning

confidence: 99%

Lock-in Thermography

Breitenstein

Warta

Langenkamp³

2010

Springer Series in Advanced Microelectronics

279

View full text Add to dashboard Cite

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“…Since BSF regions have associated a lower SRV, the concentration of charge carriers while scanning BSF areas is higher, and then the probability for the emitted photons to be reabsorbed by free carriers should be more favorable. However, for photons with wavelengths within the spectral range of our interest, i.e., 1000-1100 nm, the intrinsic band-to-band absorption is greatly predominant, 26 and therefore, the impact of free-carrier absorption can be considered negligible.…”

Section: Reabsorption Phenomena For the Study Of Back Surfacesmentioning

confidence: 99%

Effects of photon reabsorption phenomena in confocal micro-photoluminescence measurements in crystalline silicon

Roigé

Alvarez

Jaffré

et al. 2017

Journal of Applied Physics

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Confocal micro-photoluminescence (PL) spectroscopy has become a powerful characterization technique for studying novel photovoltaic (PV) materials and structures at the micrometer level. In this work, we present a comprehensive study about the effects and implications of photon reabsorption phenomena on confocal micro-PL measurements in crystalline silicon (c-Si), the workhorse material of the PV industry. First, supported by theoretical calculations, we show that the level of reabsorption is intrinsically linked to the selected experimental parameters, i.e., focusing lens, pinhole aperture, and excitation wavelength, as they define the spatial extension of the confocal detection volume, and therefore, the effective photon traveling distance before collection. Second, we also show that certain sample properties such as the reflectance and/or the surface recombination velocity can also have a relevant impact on reabsorption. Due to the direct relationship between the reabsorption level and the spectral line shape of the resulting PL emission signal, reabsorption phenomena play a paramount role in certain types of micro-PL measurements. This is demonstrated by means of two practical and current examples studied using confocal PL, namely, the estimation of doping densities in c-Si and the study of back-surface and/or back-contacted Si devices such as interdigitated back contact solar cells, where reabsorption processes should be taken into account for the proper interpretation and quantification of the obtained PL data. Published by AIP Publishing.

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“…The absorptance is measured using a photothermal deflection spectroscopy (PDS) setup. 32 The absorption is reduced for energies below the band gap energy and the free carrier absorption of the doped wafer 33 increases continuously towards low photon energies. The indirect emission spectra in Fig.…”

Section: Onset Voltagementioning

confidence: 99%

Measurement and modeling of reverse biased electroluminescence in multi-crystalline silicon solar cells

Schneemann

Kirchartz

Carius

et al. 2013

Journal of Applied Physics

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Approach to the physical origin of breakdown in silicon solar cells by optical spectroscopy J. Appl. Phys. 108, 123703 (2010) Calibrated microscopic measurements of electroluminescent emission spectra of reverse biased multi-crystalline silicon solar cells in a wide range of photon energies E (0.8 eV E 4 eV) are reported. The observed spectra originating directly from point-like sources exhibit a broad maximum around 0.8 eV followed by a high photon energy tail. A model for intraband emission accurately fits microscopically measured spectra obtained from single point sources. Furthermore, we do not find significant features from interband recombination. From the fits to the intraband transition model, we extract an effective charge carrier temperature of around 4000 K for all investigated spots. The analysis also yields the different depths of the sources, which are shown to be consistent with the dimension of the space charge region. From the areas around the point sources, we observe indirect emission of internally reflected light. Due to the multiple paths through the wafer, this indirect emission exhibits a maximum at a photon energy slightly lower than the band gap energy E g . We demonstrate that global, non-microscopic measurements are strongly influenced by this indirect radiation and therefore prone to misinterpretation. V C 2013 AIP Publishing LLC.[http://dx

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Free Carrier Absorption in Silicon

Cited by 159 publications

References 11 publications

Lock-in Thermography

Lock-in Thermography

Effects of photon reabsorption phenomena in confocal micro-photoluminescence measurements in crystalline silicon

Measurement and modeling of reverse biased electroluminescence in multi-crystalline silicon solar cells

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