2008
DOI: 10.1109/jmems.2007.912727
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Fracture Strength of Single-Crystal Silicon Carbide Microspecimens at 24 $^{\circ}\hbox{C}$ and 1000 $^{\circ}\hbox{C}$

Abstract: Three shapes of silicon carbide tensile specimens were tested-curved with a low stress-concentration factor and straight with a circular hole or an elliptical hole. The nominal thickness was 125 µm with a net section that is 100-µm wide; the overall length of these microspecimens was 3.1 mm. They were fabricated by an improved version of deep reactive ion etching, which produced specimens with smooth sidewalls and cross sections having a slightly trapezoidal shape that was exaggerated inside the holes. The nov… Show more

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Cited by 25 publications
(12 citation statements)
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“…The maximum von Mises stress on the chip from the FEA simulations is 164 MPa when molybdenum contacts are used and 158 MPa when ALG contacts are used. These values are lower than the fracture strength of SiC given in [14], in the range of 0.5 to 1.5 GPa. The average von Mises stress on the diode chip from the numerical simulations, as a function of the clamping force for the different contact materials and a load current of 20 A, is presented in Fig.…”
Section: Finite Element Analysis Of the Performance Of A Siliconcontrasting
confidence: 55%
“…The maximum von Mises stress on the chip from the FEA simulations is 164 MPa when molybdenum contacts are used and 158 MPa when ALG contacts are used. These values are lower than the fracture strength of SiC given in [14], in the range of 0.5 to 1.5 GPa. The average von Mises stress on the diode chip from the numerical simulations, as a function of the clamping force for the different contact materials and a load current of 20 A, is presented in Fig.…”
Section: Finite Element Analysis Of the Performance Of A Siliconcontrasting
confidence: 55%
“…It should be noted that the yield stress of SiC is 21 GPa [23]. According to Sharp et al [24], the fracture strength of smooth SiC of any shaped specimen is in the range of 0.5 -1.5 GPa. Additionally in the experiment we haven't observed any crack in the chip for both contact pad materials.…”
Section: B Stress Distribution On the Diodementioning
confidence: 99%
“…Various methods for the micro-tensile testing of SiC coatings have been proposed, such as the specimen end inserted in holder, a specimen fixed onto the holder using adhesives, a grip holder to grip a specimen, and a holed specimen loaded on a holder using pins. [16][17][18][19][20] The present study developed a new grip method by which the specimen was fixed onto small ceramic holders and held by a ceramic pin. A thin and brittle SiC tensile specimen was used for the high-temperature micro-tensile test using an Instron 8848 micro-tester (Micro Force System, Instron, USA).…”
Section: High-temperature Micro-tensile Testmentioning
confidence: 99%