An initial consideration of silicon carbide devices in pressure-packages

Gonzalez, Jose Ortiz; Alatise, Olayiwola; Li, Ran; Mawby, P.A.; Rajaguru, Pushparajah; Bailey, Christopher

doi:10.1109/ecce.2016.7854851

Cited by 9 publications

(4 citation statements)

References 10 publications

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“…For these surface mounted packages, heat is dissipated through PCB copper vias, metal core or AlN inlay, and a heatsink is mounted on the other side of the board to extract the heat. Presspack packages have been used for SiC MOSFETs to reduce parasitic inductance or eliminate wirebonding and die-attach and can be used for high power and high temperature applications [113][114][115][116]. High temperature packaging solutions, e.g.…”

Section: F Packaging and Thermal Managementmentioning

confidence: 99%

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Yuan

Laird

Walder

2021

IEEE Trans. Power Electron.

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Power devices based on wide-bandgap (WBG) material such as silicon-carbide (SiC) can operate at higher switching speeds, higher voltages and higher temperatures compared to those based on silicon (Si) material. This paper highlights some opportunities brought by SiC devices in existing and emerging applications in terms of efficiency and power density improvement. While the opportunities are clear, there are also design challenges that must be met in order to realize their full potential. For example, the fast switching speeds and high dv/dt of SiC devices can cause increased electromagnetic interference (EMI), current overshoot, cross-talk effect and have a negative impact on loads such as motors. This paper presents several potential solutions to tackle the application challenges and to fully exploit the superior characteristics of SiC devices and converters while attenuating their negative side-effects. This paper provides an overview of recent SiC device research and development activities based on academic literature, work carried out by the authors and collaborators as well as input from industry. It aims to provide benchmark results and a timely and useful reference to accelerate the adoption and deployment of SiC devices and converters.

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Section: F Packaging and Thermal Managementmentioning

confidence: 99%

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Yuan

Laird

Walder

2021

IEEE Trans. Power Electron.

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“…There have been several reports in which the full advantages of pressure contact technology in WBG devices have been utilized. For example, J. Gonzalez et al explored the feasibility of pressure contact on SiC chips and developed a 200 A SiC Schottky diode power module to study the influence of pressure on the current distribution and forward voltage [4]. N. Zhu et al used flexible press pins called "fuzz button" in a low-profile interposer to apply pressure contacts on the top side of SiC MOSFETs [5].…”

Section: Introductionmentioning

confidence: 99%

“…Although spring connections have been incorporated in IGBT modules for many years, they have not yet been used in GaN power modules. The relatively small size and homogeneous horizontal structure of GaN chips add complexity in the realization of pressure contacts in GaN power modules [4]. The requirement of low parasitics and thermal conductance also limits the usage of conventional mechanical clips and springs.…”

Section: Introductionmentioning

confidence: 99%

Multi-Physical Design of a Wave Spring Connector for a Highly-Reliable GaN Power Module

Wang

Wang²,

J.E.

et al. 2022

2022 IEEE International Power Electronics and Application Conference and Exposition (PEAC)

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Conventional wire bonding in emerging wide bandgap (WBG) semiconductor devices employed in power modules is subjected to failure due to thermo-mechanical stress occurring at the joints. Pressure contact technology improves the reliability of such power modules, eliminating wire bonds between the substrate and components. This paper presents the characteristics and design process of a new type of spring connector in a gallium-nitride (GaN) DC-DC converter for reducing parasitics as well as improving heat dissipation and mechanical stability. Using analytical models and multi-physics finite element method (FEM) simulations, the geometrical design of the spring has been optimized to achieve low parasitics and satisfactory cooling ability, combined with a safe maximum stress. FEM simulations and initial measurement of the optimized spring connector indicate a low inductance (~3 nH) and a low resistance (~5 mΩ).

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“…The multiple chip prototype is an expansion of the single chip prototype which was used in [7,8] for the evaluation of the impact of the intermediate contact material on the electrical and thermal characteristics in pressure contact assemblies. The intermediate contact materials evaluated were molybdenum and ALG.…”

Section: A Prototype Design and Single Chip Module Characterizationmentioning

confidence: 99%

Pressure contact multi-chip packaging of SiC Schottky diodes

Gonzalez

Alatise

Mawby

et al. 2017

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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An initial consideration of silicon carbide devices in pressure-packages

Cited by 9 publications

References 10 publications

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Multi-Physical Design of a Wave Spring Connector for a Highly-Reliable GaN Power Module

Pressure contact multi-chip packaging of SiC Schottky diodes

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