Fracture Prediction of Single Crystal Silicon Mems Under Multi-Axial Loading

Fitzgerald, Alissa M.; Pierce, David M.; White, Carolyn D.; Huigens, B.M.; Eaton, Jeremy

doi:10.31438/trf.hh2008.30

Cited by 1 publication

(2 citation statements)

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“…Maximum stresses (von Mises stress) and tensions at critical points are below 100 MPa, which are low enough to ensure the mechanical stability of the sensor element. 4 Furthermore, the spatial temperature distribution is also illustrated in Fig. 2(b) with a magnitude of up to 2.5 mK for the chosen input flux of 1 W∕m 2 .…”

Section: Simulationsmentioning

confidence: 98%

“…Figure 2(a) shows a simulation result of a specific design for a load in the form of a static acceleration of 5000 m/s2. Maximum stresses (von Mises stress) and tensions at critical points are below 100 MPa, which are low enough to ensure the mechanical stability of the sensor element 4 . Furthermore, the spatial temperature distribution is also illustrated in Fig.…”

Section: Sensor Designmentioning

confidence: 99%

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Design and characterization of a pyroelectric detector based on three-dimensional structured hafnium oxide thin films

et al. 2022

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Pyroelectric detectors are used for gas analysis and flame detection because of their fast response and excellent performance. Most pyroelectric devices are based on monocrystalline lithium tantalate or pyroelectric lead zirconate titanate thin films deposited on a silicon (Si) substrate. In comparison, recently discovered pyroelectric-doped hafnium oxide (HfO 2 ) offers the possibility of manufacturing completely complementary metal-oxide-semiconductor (CMOS)compatible devices on large Si wafers. This is a promising approach to simplifying mass production of the sensor element and realizing new sensor structures with a high performance. Si substrates were structured with trenches and filled with thin-doped HfO 2 layers by atomic layer deposition to multiply the pyroelectric current responsivity. An effective pyroelectric coefficient of up to 1300 μC∕m 2 ∕K was measured. Micromechanical structuring of the 6-in Si wafers was used to improve the thermal conversion of the sensor element. The applied plasmonic absorbers increase the infrared light absorption to >80% for the spectral range of 3 to 5 μm, which was determined using Fourier transform infrared reflection measurements. In the first step, the performance of the sensor element was evaluated with an analog transimpedance amplifier with a feedback resistance of 5 GΩ. A specific detectivity D Ã > 1 • 10 7 cm p Hz∕W was measured for the frequency range of 1 to 10 Hz. In addition, an application-specific integrated circuit was designed for the electrical signal conditioning to build a fully CMOScompatible pyroelectric detector. It offers a simple to manufacture, flexible configuration, and digital communication interface with a signal-to-noise performance close to analog detectors. We present the measurement results of different sensor elements and detector types.

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Section: Simulationsmentioning

confidence: 98%