2009
DOI: 10.1016/j.jallcom.2009.08.092
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FPLAPW study of the structural, electronic, and optical properties of Ga2O3: Monoclinic and hexagonal phases

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Cited by 73 publications
(47 citation statements)
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“…3, we can extract relevant information about the character of the electronic states, which is crucial in view of understanding the nature of core-level excitations. The valence region is characterized by a manifold of bands with predominant O-p character, in agreement with previous ab initio calculations, performed with LDA [41], as well as with hybrid functionals [42]. In the same energy interval we find also contributions from Ga atoms, with p and especially d states close to the gap.…”
Section: A Electronic Propertiessupporting
confidence: 89%
“…3, we can extract relevant information about the character of the electronic states, which is crucial in view of understanding the nature of core-level excitations. The valence region is characterized by a manifold of bands with predominant O-p character, in agreement with previous ab initio calculations, performed with LDA [41], as well as with hybrid functionals [42]. In the same energy interval we find also contributions from Ga atoms, with p and especially d states close to the gap.…”
Section: A Electronic Propertiessupporting
confidence: 89%
“…A BaF 2 6-detector PAC setup was used [17], but when measuring single crystals only one 4-detector plane of this setup was selected, where the sample's c-axis was oriented within the detector plane at The lattice parameters of the Ga 2 O 3 powder samples and nanowires were previously found to be "relaxed" [18], i.e., with standard bulk parameters, thus the values a = 12.23Å, b = 3.08Å, c = 5.80Å and = 107.3 o , reported in ref. [10], were considered, which are in agreement with the optimum estimated atomic positions and lattice parameters found in the theoretical study of Ga 2 O 3 done by F. Litimein et al [19].…”
Section: Technical Detailssupporting
confidence: 82%
“…Recently, we reported the properties of the fundamental absorption edge at 5.61 eV [41]. Some studies investigated α-Ga 2 O 3 by means of firstprinciples computations [17,[42][43][44].…”
Section: Introductionmentioning
confidence: 99%