Fourth-Harmonic Schottky Diode Mixer Development at Sub-Millimeter Frequencies

Maestrojuán, I.; Ederra, I.; Gonzalo, R.

doi:10.1109/tthz.2015.2407862

Cited by 21 publications

(13 citation statements)

References 7 publications

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“…Besides, the tolerance errors due to manufacturing process and the fact that the diodes are welded also contribute to have higher losses. Nonetheless, the performance of the circuits presented in this work are not far from the state-of-the-art [4][5].…”

Section: Resultsmentioning

confidence: 93%

“…In this work two 300 GHz receiver configurations will be compared. On the one hand, a fourth harmonic mixer [4], which is chosen because it is easier to find a local oscillator at W-Band (around 75 GHz) with enough power to pump the mixer diodes than at higher frequencies, as it would be the case of a subharmonic mixer. In addition, the LO can be based on COST MMICS and built on planar technology.…”

Section: Introductionmentioning

confidence: 99%

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Comparison of Fourth-harmonic and Combined Doubler/Subharmonic Mixer with integrated MMIC based Local Oscillator

Pérez-Escudero

Quemada

Gonzalo³

et al. 2019

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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In this paper a comparison between a fourth harmonic mixer and a combined doubler/subharmonic mixer based on Schottky diodes working at 300 GHz with MMIC Local Oscillator (LO) integrated in a single enclosing is presented. Both configurations allow reducing the LO requirements, since a lower LO frequency is used. In addition, the integration of the MMIC Local Oscillator with the mixer in the same single metallic block is the main novelty and advantage of this work. Since only one block is used, flange connections are avoided. This way, misalignment errors are also prevented. Besides this advantage, the compactness of this solution is also remarkable, leading to a significant weight reduction.

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Section: Resultsmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Comparison of Fourth-harmonic and Combined Doubler/Subharmonic Mixer with integrated MMIC based Local Oscillator

Pérez-Escudero

Quemada

Gonzalo³

et al. 2019

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Self Cite

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“…The mixing principle of the mixer is based on the non-linear characteristics of the Schottky diode, so Schottky diodes have a critical impact on the performance of the subharmonic mixer [11]. Establishing a precise diode model is a prerequisite for successful mixer design.…”

Section: Planar Gaas Schottky Diodementioning

confidence: 99%

1.1 THz tenth harmonic mixer based on planar GaAs Schottky diode

Zhang

et al. 2019

IET Microwaves, Antennas & Propagation

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Here, the tenth harmonic mixing technology based on planar GaAs Schottky diode is first proposed for the 1.1 terahertz (THz) frequency conversion module. The first higher order mode cut‐off frequency of the suspended microstrip line has been investigated to determine the appropriate cross‐sectional dimension of transmission line shield cavity in the radio frequency (RF) circuit portion. The height of shield cavity of transmission line is designed to be discontinuous in order to facilitate the assembly of the diode. A modelling approach combining field and circuit is used to achieve joint simulation of linear passive structure and diode non‐linear characteristics. The simulation results show that the frequency conversion loss of this mixer is <55 dB in the RF frequency range of 1.03–1.154 THz, and the best frequency conversion loss is 50 dB at RF of 1.098 THz.

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“…Subharmonic mixers are preferred due to their excellent performances referring to noise temperature and conversion loss . High harmonic submillimeter wave and terahertz mixers are also researched to reduce the LO frequency . However, the high harmonic mixers have worse conversion loss and noise temperature compared with subharmonic mixers, thus they cannot meet the requirement of high sensitivity imaging systems.…”

Section: Introductionmentioning

confidence: 99%

220 GHz wideband integrated receiver front end based on planar Schottky diodes

Yang

Zhang

Zhao

et al. 2020

Micro & Optical Tech Letters

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In this article, a 220 GHz wideband receiver front end is proposed, featuring a 220 GHz subharmonic mixer and a 110 GHz wideband tripler integrated in one single block. The 220 GHz subharmonic mixer and 110 GHz tripler are firstly developed separately with proper planar Schottky diodes. According to the simulated and experimental results, the direct combination of independent mixer and tripler will lead to deterioration of the front end's performances, especially for wideband receivers. This indicates the necessity of building matching network between the cascade circuits in wideband submillimeter receivers. To improve the integral performances of the receiver front end and reduce its size, the combination of the subharmonic mixer and the tripler was optimized with load‐pull techniques and realized in one block. Measured results reveal that the single sideband (SSB) conversion loss of the integrated receiver front end is 7.5‐11 dB from 185 to 250 GHz, while the double sideband (DSB) noise temperature is 750‐1600 K within this frequency range. The integrated front end features half size of the combination of independent modules and better performances. Good agreement between the simulated and measured results shows that the integration and optimization techniques can be applied to realize compact terahertz systems in the future.

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Fourth-Harmonic Schottky Diode Mixer Development at Sub-Millimeter Frequencies

Cited by 21 publications

References 7 publications

Comparison of Fourth-harmonic and Combined Doubler/Subharmonic Mixer with integrated MMIC based Local Oscillator

Comparison of Fourth-harmonic and Combined Doubler/Subharmonic Mixer with integrated MMIC based Local Oscillator

1.1 THz tenth harmonic mixer based on planar GaAs Schottky diode

220 GHz wideband integrated receiver front end based on planar Schottky diodes

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