Four-fold symmetric anisotropic magnetoresistance of single-crystalline Ni(001) film

Xiao, Xia; Li, Junxue; Ding, Zhaofeng; Wu, Y. Z.

doi:10.1063/1.4936175

Cited by 16 publications

(19 citation statements)

References 29 publications

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“…2.4 may not be appropriate for single crystalline films due to the band structure influence on AMR [79]. In such samples AMR can exhibit additional four-fold symmetry [80][81][82][83], asymmetric behaviour [84], and strong dependence on the angle between the current and crystalline axis [80][81][82][83][84][85]. In both poly and single crystalline films typically ∆R > 0 [86], although there are exceptions [79,87], and while the effect of AMR is small compared to GMR or TMR in multilayer structures, in monolayers AMR is the dominate effect and is typically as large as a few percent, although this depends on, amongst other factors, the material, sample geometry and temperature [79], for example as the film thickness decreases, AMR decreases [88].…”

Section: Anisotropic Magnetoresistancementioning

confidence: 99%

Electrical detection of magnetization dynamics via spin rectification effects

2016

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The purpose of this article is to review the current status of a frontier in dynamic spintronics and contemporary magnetism, in which much progress has been made in the past decade, based on the creation of a variety of micro-and nano-structured devices that enable electrical detection of magnetization dynamics. The primary focus is on the physics of spin rectification effects, which are well suited for studying magnetization dynamics and spin transport in a variety of magnetic materials and spintronic devices. Intended to be intelligible to a broad audience, the paper begins with a pedagogical introduction, comparing the methods of electrical detection of charge and spin dynamics in semiconductors and magnetic materials respectively. After that it provides a comprehensive account of the theoretical study of both the angular dependence and line shape of electrically detected ferromagnetic resonance (FMR), which is summarized in a handbook formate easy to be used for analyzing experimental data. We then review and examine the similarity and differences of various spin rectification effects found in ferromagnetic films, magnetic bilayers and magnetic tunnel junctions, including a discussion of how to properly distinguish spin rectification from the spin pumping/inverse spin Hall effect generated voltage. After this we review the broad applications of rectification effects for studying spin waves, nonlinear dynamics, domain wall dynamics, spin current, and microwave imaging. We also discuss spin rectification in ferromagnetic semiconductors. The paper concludes with both historical and future perspectives, by summarizing and comparing three generations of FMR spectroscopy which have been developed for studying magnetization dynamics.

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Section: Anisotropic Magnetoresistancementioning

confidence: 99%

Electrical detection of magnetization dynamics via spin rectification effects

2016

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“…The extrinsic contributions due to impurity scattering, including skew scattering and side jump, have been identified, as has the intrinsic mechanism that results from the Berry curvature [8] of the energy bands. In contrast, the microscopic understanding of AMR is still unsatisfactory after a long history of study, especially in single-crystal materials [9][10][11][12][13][14][15][16][17][18]. Phenomenologically, AMR can be described by a conductivity tensor, which is a function of the magnetization and current directions with respect to the crystallographic axes [2,3].…”

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confidence: 99%

Intrinsic Mechanism for Anisotropic Magnetoresistance and Experimental Confirmation in CoxFe1−x Single-Crystal Films

Zeng

Ren

et al. 2020

Phys. Rev. Lett.

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Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co x Fe 1−x alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special k points can be shifted towards or away from the Fermi energy by varying the alloy composition and hence the exchange splitting, thus allowing AMR tunability. The prediction is confirmed by delicate transport measurements, which further reveal a reciprocal relationship of the longitudinal and transverse resistivities along different crystal axes.

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“…Moreover, the γ yz scan shows the superposition of two-and four-fold contributions. The four-fold contribution of the ADMR curve cannot exist in the polycrystalline film, and has only been reported for single-crystalline films such as Fe 3 O 4 [33,34], (Ga,Mn)As [35], Ni [36], Fe 4 N [37], and Co 2 MnSi [38]. The ADMR curves of epitaxial Fe films in all α xy , β xz and γ yz scans can be expressed by the following equation:…”

Section: Resultsmentioning

confidence: 99%

“…The thickness-dependent four-fold anisotropic resistivity Δρ 4 can be also determined by fitting the experimental ADMR curves using equation (1), as presented in figure 4(a). It is clear that the fitted Δρ [33,34], (Ga,Mn)As [35], Ni [36], Fe 4 N [37], and Co 2 MnSi [38], but all these studies focused on the measurements in α xy scans. Our measurements showed that four-fold symmetry could exist in all α xy , β xz , and γ yz scans.…”

Section: Equations (3) and (4) Can Explain Whymentioning

confidence: 99%

Anomalous Hall magnetoresistance in single-crystal Fe(001) films

Jia

Chen

et al. 2020

New J. Phys.

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The angular-dependent magnetoresistance (MR) in epitaxial Fe(001) films grown on MgO(001) is systematically investigated at room temperature. The resistivities with in-plane magnetic fields parallel (ρ x ) and transverse (ρ y ) to a current and a perpendicular field (ρ z ) show a correlation of ρ z ≈ ρ x > ρ y for Fe film thickness (d Fe ) between 3 and 50 nm, which is distinctly different from the conventional anisotropic MR relation of ρ x > ρ y ≈ ρ z . The dependence of such unusual MR on d Fe is quantitatively explained by the competition between the anomalous Hall MR, intrinsic anisotropic MR, and the MR induced by the geometrical size effect in Fe films. Our results also reveal the strong four-fold symmetric terms in the measured angular-dependent MR with a linear dependence of 1/d Fe .

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Four-fold symmetric anisotropic magnetoresistance of single-crystalline Ni(001) film

Cited by 16 publications

References 29 publications

Electrical detection of magnetization dynamics via spin rectification effects

Electrical detection of magnetization dynamics via spin rectification effects

Intrinsic Mechanism for Anisotropic Magnetoresistance and Experimental Confirmation in CoxFe1−x Single-Crystal Films

Anomalous Hall magnetoresistance in single-crystal Fe(001) films

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