2020
DOI: 10.1088/1367-2630/ab7d7b
|View full text |Cite
|
Sign up to set email alerts
|

Anomalous Hall magnetoresistance in single-crystal Fe(001) films

Abstract: The angular-dependent magnetoresistance (MR) in epitaxial Fe(001) films grown on MgO(001) is systematically investigated at room temperature. The resistivities with in-plane magnetic fields parallel (ρ x ) and transverse (ρ y ) to a current and a perpendicular field (ρ z ) show a correlation of ρ z ≈ ρ x > ρ y for Fe film thickness (d Fe ) between 3 and 50 nm, which is distinctly different from the conventional anisotropic MR relation of ρ x > ρ y ≈ ρ z . The dependence of such unusual MR on d Fe is quantitati… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 6 publications
(1 citation statement)
references
References 46 publications
0
1
0
Order By: Relevance
“…For instance, both a bulk anisotropic magnetoresistance and planar Hall resistance may result from two consecutive transverse scatterings of spin-polarized conduction electrons, due to the anomalous Hall effect [3]. In geometrically confined systems-such as ferromagneticmetal thin films or layered structures, the anomalous-Hall induced anisotropic magnetoresistances may acquire distinctive angular dependences, owing to the modulation of the bulk spin and charge currents caused by interfacial spin accumulation and the resulting diffusive spin current [4][5][6][7][8][9]. * E-mail: shulei.zhang@case.edu…”
Section: Introductionmentioning
confidence: 99%
“…For instance, both a bulk anisotropic magnetoresistance and planar Hall resistance may result from two consecutive transverse scatterings of spin-polarized conduction electrons, due to the anomalous Hall effect [3]. In geometrically confined systems-such as ferromagneticmetal thin films or layered structures, the anomalous-Hall induced anisotropic magnetoresistances may acquire distinctive angular dependences, owing to the modulation of the bulk spin and charge currents caused by interfacial spin accumulation and the resulting diffusive spin current [4][5][6][7][8][9]. * E-mail: shulei.zhang@case.edu…”
Section: Introductionmentioning
confidence: 99%