Forschungsrichtungen in der Chemie des Germaniums

Gastinger, Ekkehard

doi:10.1007/bfb0051766

Cited by 5 publications

(2 citation statements)

References 220 publications

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“…By employing large Ge surfaces (powdered samples) Schwab (10) was able to measure oxygen consumption in this reaction. It is generally recognized that the stable Ge species in neutral or acidic solutions and in the absence of complexing agents is metagermanic acid, H~GeO~ (11 ). Accordingly, the over-all dissolution reaction of Ge in water containing dissolved oxygen may be represented as follows:…”

Section: Discussionmentioning

confidence: 99%

The Reaction of Germanium with Aqueous Solutions

Harvey

Gatos

1958

J. Electrochem. Soc.

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The dissolution of germanium in water was studied as a function of oxygen partial pressure, temperature, crystallographic-orientation, and mobile-carrier density. It was found that, although thermodynamically feasible, germanium does not react with water, freed of oxygen, in the temperature range studied (up to 100~In the presence of oxygen the dissolution rate in pure water is a function of oxygen partial pressure, reaching a limiting value of the order of 1 t,g/cm~/hr at 35~ under oxygen partial pressures greater than approximately 0.5 atm. For a given oxygen pressure the dissolution rate is approximately trebled for a ten-degree temperature rise, the measured activation energy for the dissolution reaction being 19 __ 2 kcal/mole. The order of dissolution rates for the three principal crystallographic faces was found to be {1O0}> {110}> {111}. No effect on the dissolution rate was found to result from changes in mobile-carrier concentrations brought about by doping or illumination. From dissolution rates and potentials it is concluded that the dissolution process is under cathodic control and that the rate-determining step is the reduction of oxygen by germanium. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 192.236.36.29 Downloaded on 2015-04-12 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 192.236.36.29 Downloaded on 2015-04-12 to IP

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Section: Discussionmentioning

confidence: 99%

The Reaction of Germanium with Aqueous Solutions

Harvey

Gatos

1958

J. Electrochem. Soc.

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“…This illustrates that a uniform native oxide film on Ge substrate can he formed effectively using the high-frequency oxygen-plasma anodization technique at a lower substrate temperature. the vacuum reached 1 x lk4 Torr, the temperahre of the substrate being about 180 "C. After vacuum deposition was finished, the substrate was continuously heated to the alloying temperature (345 "C) of Au-Ge [9], and the temperature was maintained for 10 min. The voltage-current characteristic of the formed Au-Ge contact shows that the Au-Ge contact alloyed at 345 "C is a good ohmic contact.…”

Section: Growth Of the Plasma-anodized Filmmentioning

confidence: 99%

Preparation and C-V characteristic of the Ge-MOS structure using plasma-anodized film as gate insulator

Sun

Liu

1991

J. Phys. D: Appl. Phys.

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This paper reports the techniques of growing uniform native oxide films on Ge(111) wafers by the method of high-frequency (500 kHz) oxygen-plasma anodization and of preparing the Ge-MOS structure using oxygen-plasma-anodized (OPA) film as gate insulator. The high-frequency C-V characteristics of prepared Ge-MOS structures show that the fixed oxide charge density near the OPA film-Ge interface is about 1011 cm-2. It is also shown that the breakdown electrical field intensity of OPA film is of the order of 106V cm-1. These results indicate that it is feasible to prepare Ge-MOS structures using the plasma-anodized film on germanium.

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Bibliography of Monographs and Review Articles

Dub

1961

Organometallic Compounds Literature Survey 1937–1958

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Forschungsrichtungen in der Chemie des Germaniums

Cited by 5 publications

References 220 publications

The Reaction of Germanium with Aqueous Solutions

The Reaction of Germanium with Aqueous Solutions

Preparation and C-V characteristic of the Ge-MOS structure using plasma-anodized film as gate insulator

Bibliography of Monographs and Review Articles

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