Forming Kinetics in $\hbox{HfO}_{2}$ -Based RRAM Cells

Solid-State Electronics

et al. 2017

In this work, a comparison between 1T-1R RRAM arrays, manufactured either with amorphous or poly-crystalline Metal-InsulatorMetal cells, is reported in terms of performance, reliability, Set/Reset operations energy requirements, intra-cell and inter-cell variability during 10k endurance cycles and 100k read disturb cycles. The modeling of the 1T-1R RRAM array cells has been performed with two different approaches: i) a physical model like the Quantum Point Contact (QPC) model was used to find the relationship between the reliability properties observed during the endurance and the read disturb tests with the conductive filament properties; ii) a compact model to be exploited in circuit simulations tools which models the I-V characteristics of each memory cells technology.

Section: Introductionmentioning

confidence: 99%

Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2

Grossi

Solid-State Electronics

et al. 2017

“…RRAM behavior is based on the possibility of electrically modifying the conductance of a Metal-Insulator-Metal (MIM) stack: the Set operation moves the cell in a low resistive state (LRS), whereas Reset brings the cell back to a high resistive state (HRS). To activate such a switching behavior, some technologies require a preliminary forming operation [6,7,8,9]. Even if forming process is performed just once, this initial state plays a fundamental role in determining the subsequent array and system performance [10].…”

Section: Introductionmentioning

confidence: 99%

“…The effectiveness of the forming process depends on its ability in creating homogeneous conductive conditions among the cells thus easing successive Set/Reset operations. Standard forming is performed by applying either a voltage ramp or a voltage/current pulse to each cell individually [7]. The former method has a major drawback due to the filament conductance control being not tight enough.…”

Section: Introductionmentioning

confidence: 99%

“…The former method has a major drawback due to the filament conductance control being not tight enough. This results in larger cell-to-cell variability and larger disturb sensitivity [7,11].…”

Section: Introductionmentioning

confidence: 99%

“…While the forming time can be minimized using a single pulse with high compliance and voltage parameters, the forming yield is limited since the applied energy is not sufficient to complete the forming process in all cells [5]. Several pulse-based forming alternatives have been proposed to increase the applied energy and therefore the yield by using long pulses or sequences of short pulses at constant voltage [7].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays

Grossi

Solid-State Electronics

et al. 2016

The forming process, which corresponds to the activation of the switching filament in Resistive Random Access Memory (RRAM) arrays, has a strong impact on the cells' performances. In this paper we characterize and compare different pulse forming techniques in terms of forming time, yield and cell-to-cell variability on 4 kbits RRAM arrays. Moreover, post-forming modeling during Reset operation of correctly working and over formed cells has been performed. An incremental form and verify technique, based on a sequence of trapezoidal waveforms with increasing voltages followed by a verify operation that terminates when the expected switching behavior has been achieved, showed the best results. This procedure narrows the post-forming current distribution whereas reducing the reset switching voltage and the operative current. These advantages materialize in a better control of the cell-to-cell variability and in an overall time and energy saving at the system level.

Resistive RAM Technology for SSDs

Solid-State-Drives (SSDs) Modeling

2017

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