Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

Macherzyński, W.; Gryglewicz, J.; Stafiniak, Andrzej; Prazmowska, Joanna; Paszkiewicz, R.

doi:10.15598/aeee.v14i1.1587

Cited by 3 publications

(2 citation statements)

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“…For the validation of the presented model, the current-voltage characteristics of a number of RTS were calculated taking into account diffusion changes at the technological stage of annealing the structure for 30 s at 800°C [15][16][17][18][19]. The simulation was carried out self-consistently with regard to dissipative processes (the number of self-consistency iterations is 20, the inter-valley interaction constant is 0.7 eV Å, the optical potential in the quantum well is 0.02 eV).…”

Section: Resultsmentioning

confidence: 99%

“…To estimate the effect of structure degradation, technological annealing of a resonant tunneling structure (RTS) was simulated at a temperature of 800°C [14][15][16][17]. The duration of annealing is 30 s, but in order to make the calculation results more distinguishable, the simulated annealing time is increased 4 times.…”

Section: About Algaas-heterostructures Cvc Kinetics Simulationmentioning

confidence: 99%

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ABOUT AlGaAs-HETEROSTRUCTURES CVC KINETICS SIMULATION

Ветрова¹,

Kuimov²,

Мешков³

et al. 2019

RENSIT

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A model of degradation of AlGaAs-heterostructures is presented. The model of dissipative processes was extended to the case of a diffusion-blured aluminum profile. The definition of the Г-Х-mixing operator is generalized for potentials without explicit heterojunctions. The effect of degradation processes on inelastic scattering is taken into account by applying the diffusion equation to the optical potential profile. The self-consistency algorithm was optimized in order to reduce the calculation time. This paper proposes a faster method based on the reduction in the number of calculated integrals for electrons density. A number of test structures were simulated via developed algorithm. The deviation of the calculation results from the experimental data on the curvature of CVC initial section does not exceed 3%. Thus, we can conclude that it is expedient to use the model to calculate the kinetics of heterostructures СVC initial section at elevated temperatures, including within the framework of the task of predicting the GIC and MIC UHF reliability indicators based on multilayer AlGaAs-heterostructures.

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Section: Resultsmentioning

confidence: 99%

Section: About Algaas-heterostructures Cvc Kinetics Simulationmentioning

confidence: 99%

ABOUT AlGaAs-HETEROSTRUCTURES CVC KINETICS SIMULATION

Ветрова¹,

Kuimov²,

Мешков³

et al. 2019

RENSIT

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Simulation of AlGaAs-heterostructures CVC kinetic due to degradation

Shasurin

Ветрова

Мешков

et al. 2019

J. Phys.: Conf. Ser.

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A model of degradation of AlGaAs-heterostructures has been developed. Parasitic resistance growth and diffusion of aluminum and donor impurities are considered as the main reasons of degradation of the structure. Current transfer models are generalized to the case of structures with continuous impurity distribution profiles. Algorithms based on numerical methods with reduced time complexity have been developed. RTS CVC was calculated before and after the annealing operation in order to verify the models. According to the results of the calculation, it was concluded that the developed algorithms are advisable for reliability prediction applications.

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Аналитический Обзор Методов Получения Вжигаемых И Невжигаемых Омических Контактов К Наногетероструктурам На Основе Нитрида Галлия

Неженцев¹,

Царик²

2023

NanoRus

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В работе рассмотрены технологические особенности изготовления омических контак- тов с сопротивлениями от 0,025 до 0,4 Ом ∙ мм к наногетероструктурам на основе нитрида галлия. Установлено, что невжигаемые омические контакты являются наиболее подходящими для освоения рабочих частот вплоть до терагерцового диапазона.

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Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

Cited by 3 publications

References 0 publications

ABOUT AlGaAs-HETEROSTRUCTURES CVC KINETICS SIMULATION

ABOUT AlGaAs-HETEROSTRUCTURES CVC KINETICS SIMULATION

Simulation of AlGaAs-heterostructures CVC kinetic due to degradation

Аналитический Обзор Методов Получения Вжигаемых И Невжигаемых Омических Контактов К Наногетероструктурам На Основе Нитрида Галлия

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