Formation of wide and deep pores in silicon by electrochemical etching

Kleimann, P.; Linnros, Jan; Petersson, C. S.

doi:10.1016/s0921-5107(99)00260-3

Cited by 62 publications

(31 citation statements)

References 7 publications

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“…Taking into account what has been said above and the experimental data on the morphology of PS layers [1,10], a porous layer may be represented as a structure with equal length cylindrical pores piercing the silicon frame. The said structure is already provided with backside electrode necessary for obtaining the PS layer by electrochemical etching.…”

Section: Introductionmentioning

confidence: 99%

Capacitance method for determination of basic parameters of porous silicon

Adamyan¹,

Adamian²,

Aroutiounian³

2007

Phys. Status Solidi (c)

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PACS 61.43. Gt, 77.22.Ch Microstructure and physical characteristics of porous silicon (PS), such as thickness, bulk porosity, dielectric permittivity, and refractive index depend directly on the production conditions, e.g., on the electrolyte composition, anodizing current density, duration of etching etc. Many various possibilities of applications of PS generate high interest towards elaboration of new or modified operative nondestructive methods for testing the microstructure characteristics of PS layer for the adjustment of its processing regimes. According to the mechanism of formation of porous silicon and experimental data on the morphology of PS layers, a porous layer represented as a structure with cylindrical pores of equal lengths piercing the silicon frame. This approximation allows considering the structure using the parallel plate model with in parallel connected capacitances of the silicon frame and the air or liquid dielectric filled pores. A method for obtaining information on the volume porosity, thickness, and dielectric permittivity of a PS layer by means of two measurements of the structure capacitance -in dry air and when the pores are filled by a condensed medium having a dielectric permittivity strongly differing from that of air (e.g., methanol) is described. Sufficiently good agreement has been revealed between the data calculated from the capacitance measurements and obtained by other methods.

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Section: Introductionmentioning

confidence: 99%

Capacitance method for determination of basic parameters of porous silicon

Adamyan¹,

Adamian²,

Aroutiounian³

2007

Phys. Status Solidi (c)

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“…Major theoretical contributions applying to macropore formation are listed in Table 3. Grow exclusively in <100> direction, dependence of the pore morphology on the sample orientation (Lehmann 1993(Lehmann , 1995Rönnebeck et al 1999;Kleimann et al 2000;Laffite et al 2011) SCR limits distances; max. depth > 600 μm achieved obtained for J < J PSL ; arrays with pore diameters 100 μm-250 nm can be obtained n-Si (aqu)/fsi Well-developed macropores oriented <100>…”

Section: Macropore Formation Modelsmentioning

confidence: 99%

Macroporous Silicon

Gabouze¹,

Ozanam²

2014

Handbook of Porous Silicon

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“…In this work, we, however, define the pores differently for convenience: pore sizes <50 nm as mesopores, pore sizes >200 nm as macropores, and sizes in-between as intermediate pores. It is worth mentioning that mesopores and macropores have been extensively studied and are now readily prepared [9][10][11][12]. On the other hand, not many detailed work, systematic investigation of methods for controlling intermediate pore formation has been performed, and hence such a technique remains to be developed.…”

Section: Introductionmentioning

confidence: 99%