Formation of uniform and square nanopore arrays on (100) InP surfaces by a two-step etching method

Abstract

Uniform and square single-crystal InP nanopore arrays have been successfully fabricated on a (100) n-InP surface by a two-step etching method. The characteristic of slow etching rates in four equivalent crystalline (011) facets of (100) n-InP in a mixture of pure HCl and pure H(3)PO(4) has been found, which is the main reason for the formation of square single-crystal InP nanopores. The distribution of nanopores can be closely associated with the distribution of carriers in the semiconductor during the electrochemical etching process. An oscillating behaviour of current has been observed, which can probably be attributed to the oscillations in concentration of the electrolyte at the pore tips caused by diffusion of the electrolyte in the nanopore channels.

Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

“…Therefore, ethanol solution is chosen to fabricate Co/InP nanocomposites, the composition of which is analyzed by EDS as shown in Figure 3a, where only In, P, and Co exist (without the presence of oxygen), indicating that the pure Co nanoparticles have been successfully embedded in the porous InP semiconductor matrix and the ethanol solution effectively protects Co from oxidization. To further investigate the structure and composition of such Co/InP nanocomposites, the XRD pattern has been measured and shown in Figure 3b, where two strong diffraction peaks at 2θ = 30.52° and 63.41° are, respectively, identified as (200) and (400) of the porous InP template consistent with the previous results [34,40]. The other four peaks at 2θ = 41.59°, 44.26°, 47.39°, and 75.89° correspond to hexagonal Co (100), (002), (101), and (110), respectively.…”

The fabrication and characteristics of indium-oxide covered porous InP

“…The IONT/InP composite structure was fabricated as follows. In the first step, porous InP samples were prepared by twostep etching of n-type InP [25]. The electrolyte was a 7.5% HCl aqueous solution.…”

Silicon Porosification: State of the Art

“…652,653,650 Supplemental reactants have sometimes been added to these electrolytes (e.g., HNO 3 or NH 4 OH and K 2 PtCl 6 in HCl) to improve the pore geometry or to get new morphologies: rectangular or square shaped pores can be formed onto GaP and InP in such specific electrolytes. [678][679][680] For InP, better results were obtained for HCl-based solutions. [646][647][648]650,681 Porosification of III-V semiconductors in alkaline media is mainly carried out in KOH but successful attempts have been also reported in NH 4 Cl, NH 4 Br or NH 4 OH.…”