Formation of the ordered array of Al magic clusters on Si(111)7×7

Kotlyar, V.G.; Зотов, А. В.; Саранин, А. А.; Kasyanova, T. V.; Cherevik, M. A.; Pisarenko, I. V.; Lifshits, V.G.

doi:10.1103/physrevb.66.165401

Cited by 128 publications

(118 citation statements)

References 15 publications

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“…Very recently the possibility to form perfectly ordered arrays of identical-size magic clusters (which are essentially 2D artificial cluster crystals) has been demonstrated. The goal has been achieved with group-III metals, Al [2][3][4], In [4,5] and Ga [4,6], deposited onto a Si(111)7×7 surface. In these cases, the substrate acts as a template for the surface-mediated magic clustering.…”

Section: Introductionmentioning

confidence: 99%

Magic nanoclusters of group III metals on Si(100) surface

Kotlyar

Зотов

Саранин

et al. 2003

e-J. Surf. Sci. Nanotechnol.

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Using scanning tunneling microscopy observations, the ability of group III metals, In, Al, Ga and Tl, to form identical-size magic nanoclusters upon high-temperature adsorption on Si(100) has been examined. Magic clustering has been detected in In/Si(100) and Al/Si(100) systems. In both cases, atomic structure of the nanocluster is plausibly described by the model of Bunk et al. [Appl.Surf.Sci. 123/124, 104 (1998)], in which six metal atoms and seven Si atoms form a stable pyramid-like cluster. In the case of In/Si(100) system, the perfectly-ordered 4×3 superlattice built of magic nanoclusters can be formed. The Al/Si(100) nanoclusters has been found to form local arrays with a 4×5 periodicity. In Ga/Si(100) and Tl/Si(100) systems, no indication of magic clustering has been detected. The criteria for magic cluster formation are discussed.

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Section: Introductionmentioning

confidence: 99%

Magic nanoclusters of group III metals on Si(100) surface

Kotlyar

Зотов

Саранин

et al. 2003

e-J. Surf. Sci. Nanotechnol.

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“…So far, numerous studies have been performed on the interaction between the metals Al, Ga, and In in group III and Si surfaces. On a Si͑111͒-͑7 ϫ 7͒ surface, these three group III metals have been reported to form common surface structures such as magic cluster arrays at modest temperature, [3][4][5][6][7] and a ͑ ͱ 3 ϫ ͱ 3͒ reconstruction ͓Fig. 1͑a͔͒ with an adsorbate coverage of 1 / 3 monolayer ͑ML͒ at higher temperatures.…”

Section: Introductionmentioning

confidence: 99%

Core-level photoemission study of thallium adsorbed on aSi(111)−(7×7)surface: Valence state of thallium and the charge state of surface Si atoms

et al. 2006

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, Core-level photoemission study of thallium adsorbed on a Si (111) The coverage-dependent valence state of Tl adsorbed on a Si͑111͒-͑7 ϫ 7͒ surface and the coverage dependence of the charge states of surface Si atoms have been investigated by high-resolution core-level photoelectron spectroscopy. Although two different reconstructions were observed in low-energy electron diffraction at different coverages, a ͑1 ϫ 1͒ pattern at a Tl coverage of 1 monolayer ͑ML͒ and a ͑ ͱ 3 ϫ ͱ 3͒ pattern at a coverage of 1 / 3 ML, the binding energy of the Tl 5d core-level was the same at Tl coverages up to 1 ML. Taking the valence state on a ͑1 ϫ 1͒ surface reported in the literature into account, we conclude that the valence state of Tl is 1+, and that the 6s 2 electrons of Tl are inactive as an inert pair in the Tl-Si bonding on a Si͑111͒ surface at a coverage of 1 ML and below. In the Si 2p core-level spectra, one surface component was observed on the ͑1 ϫ 1͒ surface, and three surface components were observed on the ͑ ͱ 3 ϫ ͱ 3͒ surface. The binding energies and intensities of the Si 2p surface components indicate that the charge state of the surface Si atoms on Tl/ Si͑111͒-͑1 ϫ 1͒ is the same as that of the ͑ ͱ 3 ϫ ͱ 3͒ surfaces induced by the other group III metals, but they are different on the Tl/ Si͑111͒-͑ ͱ 3 ϫ ͱ 3͒ surface.

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“…Third, coalesced clusters cover 7% of all the HUCs. Even if these arrays are not as atomically precise as model systems such as Al and Tl on Si(111)-(7 × 7) [7,8,23], both homogeneity and long range order may be sufficient to allow for a study of this system by means of a space integrating measurement technique like photoemission.…”

Section: Methodsmentioning

confidence: 99%

“…In particular, the Si(111)-(7× 7) surface reconstruction is a very good template for the growth of self-organized arrays of metallic nanoclusters. Indeed, its large unit cell and the high barrier for the hopping of deposited metallic atoms between the two half unit cells allow the formation of atomically precise clusters [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Scanning tunneling microscopy at multiple voltage biases of stable “ring-like” Ag clusters on Si(111)–(7×7)

et al. 2012

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Since more than twenty years it is known that deposition of Ag onto Si(111)-(7 × 7) leads under certain conditions to the formation of so-called "ring-like" clusters, that are particularly stable among small clusters. In order to resolve their still unknown atomic structure, we performed voltage dependent scanning tunneling microscopy (STM) measurements providing interesting information about the electronic properties of clusters which are linked with their atomic structure. Based on a structural model of Au cluster on Si(111)-(7 × 7) and our STM images, we propose an atomic arrangement for the two most stable Ag "ring-like" clusters.

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Formation of the ordered array of Al magic clusters on Si(111)7×7

Cited by 128 publications

References 15 publications

Magic nanoclusters of group III metals on Si(100) surface

Magic nanoclusters of group III metals on Si(100) surface

Core-level photoemission study of thallium adsorbed on aSi(111)−(7×7)surface: Valence state of thallium and the charge state of surface Si atoms

Scanning tunneling microscopy at multiple voltage biases of stable “ring-like” Ag clusters on Si(111)–(7×7)

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