Formation of ST12 phase Ge nanoparticles in ZnO thin films

Ceylan, Abdullah; Gumrukcu, Ali E.; Akin, Nihan; Özcan, Şadan; Özçelik, Süleyman

doi:10.1016/j.mssp.2015.06.080

Cited by 4 publications

(2 citation statements)

References 37 publications

(45 reference statements)

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“…It can be seen that the frequencies of all modes are positive over the whole Brillouin zone, which indicates that the SLD structures are thermodynamically stable. Furthermore, compared with the other experimentally discovered metastable allotropes of Ge and Sn [45][46][47][48][49][50] , the germancite and stancite share the same order of magnetite of the mass density and cohesive energies (see Supplemental Information for details), so we expect the germancite and stancite could be composed in the future experiments.…”

Section: Resultsmentioning

confidence: 85%

Stable Dirac semimetal in the allotropes of group-IV elements

et al. 2016

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Three dimensional topological Dirac semi-metals represent a novel state of quantum matter with exotic electronic properties, in which a pair of Dirac points with the linear dispersion along all momentum directions exist in the bulk. Herein, by using the first principles calculations, we discover a new metastable allotrope of Ge and Sn in the staggered layered dumbbell structure, named as germancite and stancite, to be Dirac semi-metals with a pair of Dirac points on its rotation axis. On the surface parallel to the rotation axis, a pair of topologically non-trivial Fermi arcs are observed and a Lifshitz transition is found by tuning the Fermi level. Furthermore, the quantum thin film of germancite is found to be an intrinsic quantum spin Hall insulator. These discoveries suggest novel physical properties and future applications of the new metastable allotrope of Ge and Sn.

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Section: Resultsmentioning

confidence: 85%

Stable Dirac semimetal in the allotropes of group-IV elements

et al. 2016

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“…Ge NPs: Metastable Allotropes. Reports on the synthesis of metastable allotropes of Ge are limited to the simple tetragonal st12-Ge phase, which can be derived by annealing of sputtered ZnO/ Ge multilayer films, 431 cluster-beam gas-phase techniques, 432 thermal evaporation under argon, 433 laser ablation of Ge in liquids, 434 and naphthalide-mediated reduction of GeCl 4 at ambient temperatures. 435 Moreover, st12-Ge has been observed during delithiation in batteries; however, the high Li content in the material also suggests a layered structure of Ge and Li and thus not an allotrope nor a solid solution in this case.…”

Section: Metastable Group IV Nanostructuresmentioning

confidence: 99%

Metastable Group IV Allotropes and Solid Solutions: Nanoparticles and Nanowires

2020

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In the past decades, group IV nanowires and nanoparticles have been the subject of extensive research. Beside tremendous progress in morphological control and integration in advanced device architectures, research on allotropes and metastable compositions has gained considerable interest. Several new approaches now allow the controlled formation of specific allotropes in the nanostructured form as well as chemical compositions not attainable by traditional synthesis protocols. The conditions applied to form these metastable solid solutions and allotropes are usually far from thermodynamic equilibrium or rely on unconventional templates. The increased interest in the field of metastable group IV nanostructures arises from their altered physical properties, including tunable, direct bandgaps with energies equivalent to the near- to mid-infrared spectral region as described for materials such as Ge1–x Sn x and hexagonal Si1–x Ge x . The implementation of these material characteristics in complementary metal oxide semiconductor (CMOS) processes are desirable for applications in electronics, optoelectronics, sensors, optics, etc. but also their use as nonsurface bound nanoparticles in sensing, nanobiotechnology and nanomedicine can offer additional opportunities. This review article highlights both the important advancements and still open questions for the continued development of these nanoscaled materials for next-generation device concepts.

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