Formation of solid-solution Cu-to-Cu joints using Ga solder and Pt under bump metallurgy for three-dimensional integrated circuits

Lin, Shih‐kang; Chang, Hao miao; Cho, Cheng liang; Liu, Yu Chen; Kuo, Yi kai

doi:10.1007/s13391-015-5015-z

Cited by 34 publications

(16 citation statements)

References 27 publications

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“…Meanwhile, modifying the argon plasma-treated metal surface can lead to even lower temperature bonding (e.g. 200 °C) due to the solid state bonding reaction resulting from low surface roughness and a defect-free interface [ 35–37 ].…”

Section: Three-dimensional Integrated Circuits: the Technologymentioning

confidence: 99%

Intermetallic compounds in 3D integrated circuits technology: a brief review

Annuar

Mahmoodian

Hamdi

et al. 2017

Science and Technology of Advanced Materials

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The high performance and downsizing technology of three-dimensional integrated circuits (3D-ICs) for mobile consumer electronic products have gained much attention in the microelectronics industry. This has been driven by the utilization of chip stacking by through-Si-via and solder microbumps. Pb-free solder microbumps are intended to replace conventional Pb-containing solder joints due to the rising awareness of environmental preservation. The use of low-volume solder microbumps has led to crucial constraints that cause several reliability issues, including excessive intermetallic compounds (IMCs) formation and solder microbump embrittlement due to IMCs growth. This article reviews technologies related to 3D-ICs, IMCs formation mechanisms and reliability issues concerning IMCs with Pb-free solder microbumps. Finally, future outlook on the potential growth of research in this area is discussed.

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Section: Three-dimensional Integrated Circuits: the Technologymentioning

confidence: 99%

Intermetallic compounds in 3D integrated circuits technology: a brief review

Annuar

Mahmoodian

Hamdi

et al. 2017

Science and Technology of Advanced Materials

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show abstract

“…The feasibility of using pure Ga paste to realise transient liquid phase bonding with a Cu substrate (with and without Pt coating) at processing temperatures ranging from 160 to 300 °C has been examined [ 59 , 60 ]. In the studies, Cu/Ga/Cu and Cu/Pt/Ga/Pt/Ga sandwich couples have been fabricated at 160 and 300 °C, respectively, to gain knowledge for developing practical industrial Ga-based solder materials ( Figure 3 ).…”

Section: Ga and Ga-based Alloys Applications In Microelectronic Inmentioning

confidence: 99%

“…Bulk Cu/Ga couples and Cu/Ga/Cu sandwich couples with reactions at moderate processing temperatures ranging from 160 to 300 °C have been studied [ 59 , 60 ]. Room-temperature IMC formation and the relevant interdiffusion behaviour in thin-film Cu/Ga [ 101 ] couples have been analysed.…”

Section: Characterisation Of Reactions Between Liquid Ga-based Allmentioning

confidence: 99%

“…This kind of interface has a negative effect on the joint strength and efforts have been made to inhibit this process. Methods that have been tried include changing the substrate from polycrystalline to a single-crystal to eliminate grain boundary effects [ 59 ], improving the wettability of liquid Ga on substrates by the addition of interlayers [ 59 ], and controlling the amount of liquid Ga [ 60 ]. The results in Figure 9 show that the non-uniform morphology forms at both the Ga/polycrystalline Cu and the Ga/single-crystal Cu interface, though the degree of “basin” formation in the Ga/polycrystalline Cu interface is greater.…”

Section: Characterisation Of Reactions Between Liquid Ga-based Allmentioning

confidence: 99%

“…A lack of hermeticity is one of the common problems that occurs during the bonding process as a consequence of the microstructure evolution, shown in Figure 3 . Notably, cracks occur in the θ-CuGa 2 phase regions of the Cu/Ga/Cu joints [ 59 , 60 ]. Similar cracks were found within the γ 1 -Cu 9 Ga 4 phase in the Cu/Pt/Ga/Pt/Ga joints [ 59 ] and the Cu/Au/EGaSn/Au/Cu joints [ 64 ], as shown in Figure 10 a,b.…”

Section: Characterisation Of Reactions Between Liquid Ga-based Allmentioning

confidence: 99%

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Ga-Based Alloys in Microelectronic Interconnects: A Review

et al. 2018

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Gallium (Ga) and some of its alloys have a range of properties that make them an attractive option for microelectronic interconnects, including low melting point, non-toxicity, and the ability to wet without fluxing most materials—including oxides—found in microelectronics. Some of these properties result from their ability to form stable high melting temperature solid solutions and intermetallic compounds with other metals, such as copper, nickel, and aluminium. Ga and Ga-based alloys have already received significant attention in the scientific literature given their potential for use in the liquid state. Their potential for enabling the miniaturisation and deformability of microelectronic devices has also been demonstrated. The low process temperatures, made possible by their low melting points, produce significant energy savings. However, there are still some issues that need to be addressed before their potential can be fully realised. Characterising Ga and Ga-based alloys, and their reactions with materials commonly used in the microelectronic industry, are thus a priority for the electronics industry. This review provides a summary of research related to the applications and characterisation of Ga-based alloys. If the potential of Ga-based alloys for low temperature bonding in microelectronics manufacturing is to be realised, more work needs to be done on their interactions with the wide range of substrate materials now being used in electronic circuitry.

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Transient Liquid Phase Bonding

Islam

Sharif

2019

Harsh Environment Electronics

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Formation of solid-solution Cu-to-Cu joints using Ga solder and Pt under bump metallurgy for three-dimensional integrated circuits

Cited by 34 publications

References 27 publications

Intermetallic compounds in 3D integrated circuits technology: a brief review

Intermetallic compounds in 3D integrated circuits technology: a brief review

Ga-Based Alloys in Microelectronic Interconnects: A Review

Transient Liquid Phase Bonding

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