Formation of single electron transistors in single-walled carbon nanotubes with low energy Ar ion irradiation technique

Mori, Takahiro; Sato, Shunsuke; Omura, Kazuo; Yajima, Shota; Tsuruoka, Yasuhiro; Achiba, Yohji; Ishibashi, Koji

doi:10.1116/1.3002388

Cited by 5 publications

(6 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This technique can be applied also for the SWCNTs with reduced acceleration energy and dose [45]. Figure 17.11 shows Coulomb oscillations of one of the SETs fabricated with the method: (a) in low temperatures (below 20 K) and (b) in high temperatures (above 80 K).…”

Section: Tunnel Barrier Formationmentioning

confidence: 95%

Quantum-Dot Devices with Carbon Nanotubes

Ishibashi

2015

Frontiers of Graphene and Carbon Nanotubes

Self Cite

View full text Add to dashboard Cite

Carbon nanotubes (CNTs) are attractive building blocks for quantum dots because of their extremely small diameters. In this chapter, typical behaviors of the carbon nanotube quantum dots and their artificial atom features are discussed. Then, some applications to the quantum-dot devices are presented. Some challenges on the necessary technologies toward integrated quantum-dot devices are also described. IntroductionA quantum dot is a structure where electrons are confined in three dimensions and has been studied for functional device applications as well as for exploring interesting physics in nanoscale. The spacing between confined discrete energy levels (E) is a important energy scale associated with the quantum dot, which becomes large as the size of the quantum dot becomes small. In the surface-gated quantum dots formed at an interface between the GaAs/AlGaAs heterostructures, which have been widely used to study transport physics [1], a size of the dot is in a range of submicron. This is limited by the resolution of electron beam lithography, and the corresponding level spacing is of the order of 0.1 meV. Another important energy scale associated with the quantum dot is a charging energy of single electrons (E c D e 2 /C † : e is an elementary charge and C † is a self-capacitance of the dot). It is of the order of 1 meV for the lithographically defined quantum dots. With those energy scales, quantum confinement effects and single-electron effects are usually observable below 1 K. Therefore, it is natural to use carbon nanotubes as building blocks of the extremely small quantum dot to realize larger quantum effects and higher temperature operation of quantum-dot devices.

show abstract

Section: Tunnel Barrier Formationmentioning

confidence: 95%

Quantum-Dot Devices with Carbon Nanotubes

Ishibashi

2015

Frontiers of Graphene and Carbon Nanotubes

Self Cite

View full text Add to dashboard Cite

show abstract

“…In fact, Ar ion beam irradiation of MWNTs has been used to fabricate a single electron transistor 11 and an inverter, 12 and has also been applied to SWNTs. [13][14][15][16] In general, the effects appear to be stronger for SWNTs than for MWNTs. However, the microscopic details of the effects are not understood in either case, and a key question for device fabrication is whether the method is controllable and reproducible.…”

Section: Introductionmentioning

confidence: 91%

Fabrication and characterization of tunnel barriers in a multi-walled carbon nanotube formed by argon atom beam irradiation

Tomizawa

Yamaguchi

Akita

et al. 2015

Journal of Applied Physics

View full text Add to dashboard Cite

We have evaluated tunnel barriers formed in multi-walled carbon nanotubes (MWNTs) by an Ar atom beam irradiation method and applied the technique to fabricate coupled double quantum dots. The two-terminal resistance of the individual MWNTs was increased owing to local damage caused by the Ar beam irradiation. The temperature dependence of the current through a single barrier suggested two different contributions to its Arrhenius plot, i.e., formed by direct tunneling through the barrier and by thermal activation over the barrier. The height of the formed barriers was estimated. The fabrication technique was used to produce coupled double quantum dots with serially formed triple barriers on a MWNT. The current measured at 1.5 K as a function of two side-gate voltages resulted in a honeycomb-like charge stability diagram, which confirmed the formation of the double dots. The characteristic parameters of the double quantum dots were calculated, and the feasibility of the technique is discussed.

show abstract

“…The details of the fabrication procedure are given in ref. 15. The SETs fabricated by this method were successfully operated, and the temperature dependence of the Coulomb oscillations is shown in Fig.…”

Section: Barrier Formation With Ar Ion Irradiation Techniquementioning

confidence: 99%

High-Temperature Operation of Single-Electron Transistors Based on Single-Walled Carbon Nanotubes

2009

Sensors and Materials

View full text Add to dashboard Cite

Single-electron transistors (SETs) are one of the possible devices for use as transducers for highly sensitive sensors that can detect small charges. We describe two approaches to fabricating high-temperature-operable single-walled carbon nanotube (SWCNT) SETs, which can operate above the temperature of liquid nitrogen, with a mass-production-adaptable process. One approach involves a SET with SWCNTs dispersed in a carboxymethylcellulose (CMC)/water suspension, which can improve the SWCNT/metal interface properties by increasing the barrier height, so that Coulomb oscillations can be observed up to 80 K. The other approach involves a SET with a segmented Coulomb island between two higher resistance parts in an individual SWCNT, which were induced by Ar ion irradiation. This SET has been operated at up to 100 K, and the operation temperature could be increased by the improvement in the device structure.

show abstract

Formation of single electron transistors in single-walled carbon nanotubes with low energy Ar ion irradiation technique

Cited by 5 publications

References 12 publications

Quantum-Dot Devices with Carbon Nanotubes

Quantum-Dot Devices with Carbon Nanotubes

Fabrication and characterization of tunnel barriers in a multi-walled carbon nanotube formed by argon atom beam irradiation

High-Temperature Operation of Single-Electron Transistors Based on Single-Walled Carbon Nanotubes

Contact Info

Product

Resources

About