Formation of silver nanoparticles in silicon by metal vapor vacuum arc ion implantation

Optical properties of low-energy Ag ion implanted monocrystalline silicon

“…Proteklih nekoliko godina posebna pažnja je usmjerena na sintezu nanostruktura prelaznih metala (npr. Ag, Cu, Au, Fe) u površinskim i pod-površinskim oblastima silicijuma (Si) i silicijumdioksida (SiO2) u cilju temeljnog razumijevanja dobijenih struktura, kao i poboljšanja njihovih elektronskih i optičkih svojstava zbog različitih tehnoloških primjena [9][10][11][12][13]. Sistemi sa metalnim nanočesticama ili nanoklasterima nalaze primjenu u oblasti plazmonike, fotonaponskih uređaja, medicine i biosenzora.…”

Study of thermal recrystallisation in Si implanted by 0.4‐MeV heavy ions

“…Ion implantation modifies the Si crystalline structure mainly in case of noble metals. The recovery and removing of crystalline defects induced by the ion implantation in Si crystalline structure could be performed by thermal annealing at temperatures of 200°C to 600°C as was reported in Seo et al and Wahl et al The annealing of the Si layers implanted with Ag (nano‐composites of Ag particles were fabricated by 50‐kV ion implantation using a high‐beam current metal vapour vacuum arc ion source) at 400°C to 600°C leads to out‐diffusion of Ag to the Si surface or a significant decrease of the Ag content in the implanted layer (using 60‐keV Ag) because of evaporation . Ag impurity diffusion into the sample volume during heating, which also decreases the concentration of the implanted ions in the buried layer, was observed in Stepanov …”

“…[2][3][4][5] A silicon-on-insulator (SOI) material developed in microelectronics and space technologies 6 because of its advantages compared to silicon bulk substrates. 7,8 The SOI is a significant material for future low-cost photonic integrated circuits because of its specific optical and electronic properties, which thanks to a very thin single layer on an amorphous backing, is a very suitable structure for ion channelling phenomena investigation. 9,10 Implantation of the metallic ions into the volume of a semiconductor brings more efficient light absorption and electron injection into the Si matrix.…”

Воздействие импульсного лазерного излучения на слои Si с высокой дозой имплантированных ионов Ag-=SUP=-+-=/SUP=-

“…При этом если концентрация внедренной примеси Ag превышает равновесный предел растворимости в матрице Si (N ∼ 10 17 at/cm 3 [10]), то в ней возникают условия для зарождения и роста металлических НЧ. В работах [6,9,11,12] сообщалось о формировании НЧ Ag в Si в результате низкоэнергетической высокодозной имплантации ионов Ag + , а также при комбинации ионной имплантации с последующим термическим отжигом [5,12]. Однако для имплантированных слоев Ag : Si, подвергнутых термическому отжигу при T = 400−500 • С, наблюдалось вытеснение примеси Ag к поверхности [12,13], а при дальнейшем росте температуры отжига происходило испарение Ag из образцов [5].…”