Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO x /insulator structures from the results of synchrotron investigations

Turishchev, S. Yu.; Терехов, В. А.; Koyuda, D. A.; Ershov, A. V.; Машин, А. И.; Parinova, E. V.; Nesterov, D. N.; Grachev, D. A.; Karabanova, I. A.; Domashevskaya, É. P.

doi:10.1134/s1063782617030241

Cited by 5 publications

(3 citation statements)

References 19 publications

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“…The probing depth for Si K edge XANES is established around 65 nm 20 that is deeper than known 5 nm for Si L 2,3 XANES. There are known a couple of papers, including ones, subjected by Si nanowire arrays studies 20,30,32,33 based on XANES K-edge spectroscopy results. On the other hand, the 65 nm probing depth is sufficiently smaller than removed Si wires arrays parts with height that is more than few micrometers (as shown in Figs 1 or 2).…”

Section: Resultsmentioning

confidence: 99%

Surface deep profile synchrotron studies of mechanically modified top-down silicon nanowires array using ultrasoft X-ray absorption near edge structure spectroscopy

Turishchev

Parinova

Pisliaruk

et al. 2019

Sci Rep

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Atomic, electronic structure and composition of top-down metal-assisted wet-chemically etched silicon nanowires were studied by synchrotron radiation based X-ray absorption near edge structure technique. Local surrounding of the silicon and oxygen atoms in silicon nanowires array was studied on as-prepared nanostructured surfaces (atop part of nanowires) and their bulk part after, first time applied, in-situ mechanical removal atop part of the formed silicon nanowires. Silicon suboxides together with disturbed silicon dioxide were found in the composition of the formed arrays that affects the electronic structure of silicon nanowires. The results obtained by us convincingly testify to the homogeneity of the phase composition of the side walls of silicon nanowires and the electronic structure in the entire length of the nanowire. The controlled formation of the silicon nanowires array may lead to smart engineering of its atomic and electronic structure that influences the exploiting strategy of metal-assisted wet-chemically etched silicon nanowires as universal matrices for different applications.

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Section: Resultsmentioning

confidence: 99%

Surface deep profile synchrotron studies of mechanically modified top-down silicon nanowires array using ultrasoft X-ray absorption near edge structure spectroscopy

Turishchev

Parinova

Pisliaruk

et al. 2019

Sci Rep

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“…[5] Adjusting the optical properties of compact SiO x thin films by controlling their stoichiometry has been utilized for the fabrication of compact 1D-photonic structures that cannot be actuated by liquid infiltration (e.g., rugate optical filters, Bragg reflectors -BRs-or Bragg microcavities -BMs-). [35][36][37][38] The challenge in the present work is the fabrication of planar 1D-photonic structures consisting of porous/nanostructured SiO x films prepared by magnetron sputtering that can be operated by liquid infiltration. With this purpose we have applied the r-MS-OAD methodology for the tailored fabrication of optofluidic-actuated 1D BRs and BMs, these latter for label-free transducer applications.…”

Section: A C C E P T E D Mmentioning

confidence: 99%

“…The NIR transparency of the SiO x samples and the large difference in refraction index between SiO 2 and SiO x (x<2) thin films (c.f., Figure 4) support the ACCEPTED MANUSCRIPT A C C E P T E D M A N U S C R I P T feasibility of fabricating 1D photonic structures by stacking layers of silicon oxides prepared by the r-MS-OAD technique. Other authors have explored this possibility with compact SiO x and SiO 2 stacked films[35][36][37][38], occasionally prepared by MS. Related selfstanding silicon optical devices have been also prepared by electrochemical etching of silicon wafers to generate the so-called porous silicon [52][53][54]. However, these methods do not provide the flexibility and strict control of photonic properties of the herein developed physical vapour deposition procedure by which porosity and composition can be adjusted independently.Porosity has been previously used to further control the photonic properties of one (e.g., ITO (indium tin oxide)[55] or two-materials multilayers [40,41,50,51].…”

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confidence: 99%

SiOx by magnetron sputtered revisited: Tailoring the photonic properties of multilayers

García-Valenzuela

Álvarez

Espinós

et al. 2019

Applied Surface Science

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Traditionally porous silicon based photonic structures have been prepared by electrochemically etching of silicon. In this work, porous multilayers of nanocolumnar SiOx and SiO2 thin films acting as near infrared (NIR) 1D-photonic nanostructures are prepared by magnetron sputtering deposition at oblique angles (MS-OA). Simultaneous control of porosity and stoichiometry of the stacked films is achieved by adjusting the deposition angle and oxygen partial pressure according to a parametric formula. This new methodologoy is proved for the synthesis of SiOx thin films with x close to 0.4, 0.8, 1.2, 1.6 and nanostructures varying from compact (at 0° deposition angle) to highly porous and nanocolumnar (at 70º and 85° deposition angles). The strict control of composition, structure and nanostructure provided by this technique permits a fine tuning of the absorption edge and refraction index at 1500 nm of the porous films and their manufacturing in the form of SiOx-SiO 2 porous multilayers acting as near infrared (NIR) ACCEPTED MANUSCRIPTRecently, SiO x nanowires have been proposed as refractive index sensing devices, [10] while in the form of stacked layers and porous films this material is utilized for the fabrication of Li battery electrodes. [11,12] Compact SiO x thin films have been fabricated by various methods, including evaporation [13][14][15] thermal chemical vapor deposition (CVD), [16,17] or magnetron sputtering (MS).[18-20] Radio frequency reactive MS was profusely utilized by Habraken et al. for the deposition of SiOx thin films.[21-26] Besides

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Dielectric properties of multi-layer nanocomposites SiO /ZrO2 after high temperature annealing

Czarnacka

Kołtunowicz

Żukowski

et al. 2019

Ceramics International

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Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO x /insulator structures from the results of synchrotron investigations

Cited by 5 publications

References 19 publications

Surface deep profile synchrotron studies of mechanically modified top-down silicon nanowires array using ultrasoft X-ray absorption near edge structure spectroscopy

Surface deep profile synchrotron studies of mechanically modified top-down silicon nanowires array using ultrasoft X-ray absorption near edge structure spectroscopy

SiOx by magnetron sputtered revisited: Tailoring the photonic properties of multilayers

Dielectric properties of multi-layer nanocomposites SiO /ZrO2 after high temperature annealing

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