Formation of Si Nano Hole Arrays Using a Self-assembled Nanolithography Mask and Cu Fill of the Array

Abstract

To fabricate a Si nanohole array, a Ag dot array was patterned on Si using nanolithography with self-assembled polystyrene nanoparticles as a mask, followed by Ag-catalytic etching. The Ag dots were triangular, approximately 80 nm on a side. The nanoholes had an approximately 60-nm-diameter circular cross-section. The nanohole depth was 2-3 μm. The Si nanoholes were filled with Cu by supercritical fluid chemical deposition using bis (diisobutylmethanate) copper (Cu (dibm) 2) as a precursor.