Formation of Potential Barriers in Undoped Disordered Semiconductors

Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties

“…The VAC analysis of the n-Si-p-GaSe structure shows that the current flow mechanism in anisotropic n-Si-p-GaSe structures depends on the value of the contact potential difference that forms the area of bulk charges. As shown in [23], due to the high density of state in the vicinity of Fermi level (~10 18 cm -3 ), the height of the potential barrier decreases as a result of the change of the potential and electric field distribution in the area of bulk charges. This leads to a deterioration in the quality factor of the p-n junction relative to the structure undergoing crystallization.…”

“…The half-width of the spectrum decreases and becomes ∆S ~ 45-500 meV. The shortening of photosensitivity and spectral range is due to high electroactive local defect density at the contact boundary [23].…”

“…Since there is no information about the electron affinity parameter for the GaSe layer, the main parameters of the zone diagram -breakdown (∆Ec and ∆E V ) were calculated according to the experimental values of the diffusion potential (V d1 and V d2 ) taking into account the Fermi level of the components and the energy values of the forbidden gap. For the calculation, the electron affinity χ n = χ p = 3.6 eV for the GaSe crystal was used [22,23]. Based on the results of the mentioned literature, the breakdowns of the energy zones for the nSi-aGaSe heterojunction were calculated for conduction and valence bands ∆Ec ~ 1.55 eV, ∆E v ~ 0.15 eV respectively.…”

Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties

“…As we have mentioned above, the presented results are obtained for the first time and the experimental data are analyzed in the framework of the theory of amorphous and disordered semiconductors [6][7][8][9][10].…”

“…It should be noted that a contact metalamorphous semiconductor [6] can function as a quasi-ohmic contact as well as an active element (when the barrier structure is formed). Besides, the currents due to the electron injection from the metal under applied external bias are also flowing through the contact.…”