Formation of Ohmic contacts on laser irradiated n-type 6H-SiC without thermal annealing

Wu, Yan; Ji, Lingfei; Zhao, Lin; Hong, Minghui; Wang, Sicong; Zhang, Yongzhe

doi:10.1016/j.cap.2019.02.008

Cited by 13 publications

(5 citation statements)

References 39 publications

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“…Figure 8a shows the I-V curves of reverse conduction of the proposed and conventional devices. The knee voltage of the intrinsic body p-n diode in the conventional trench MOSFET is about 2.7 V, while that of the integrated SBD in the proposed ACCUFET is only about 0.8 V. And the metal used for Schottky contacts is titanium with a work function of 4.33 eV [30][31][32]. Figures 8b and 8c demonstrate the distribution of current density and current flowing lines of the conventional device and the proposed device, respectively.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability

Kong,

Duan,

Zhang

et al. 2023

IET Power Electronics

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A novel 1440‐V 4H‐SiC accumulation mode MOSFET (ACCUFET) with ultra‐low specific on‐resistance and improved reverse recovery performance is proposed in this article. As for the proposed SiC ACCUFET, the channel region can be completely depleted by the P‐type heavily doped polysilicon gate to build an electron barrier and realize a normally‐off device. And a Schottky barrier diode (SBD) is integrated below the trench gates on both sides, which brings the feasibility of realizing reverse conduction function of the proposed ACCUFET. Also, the p‐shield regions under the Schottky contact metal provide a good electric field shielding effect for the gate oxide. Compared with the conventional SiC trench MOSFET, the numerical simulation results show that the specific on‐resistance (Ron,sp) of the proposed ACCUFET is reduced by more than 64%. The high‐frequency figures‐of‐merit HFOM [Ron,sp × Cgd] and HFOM [Ron,sp × Qgd] of the proposed device are improved by 53.19% and 58.74%, respectively. The reverse recovery time (trr), and reverse recovery charge (Qrr) are reduced by 23.28% and 82.73%, respectively. In addition, the results also indicate that the proposed device has a better latch‐up immunity compared with the conventional SiC trench MOSFET. The excellent device performance and the simple manufacturing process provide a good prospect for the application of the proposed device.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability

Kong,

Duan,

Zhang

et al. 2023

IET Power Electronics

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“…At the post-implant annealing high temperatures occur on the wafer surface resulting in a high doping near to the surface. The consequence is a reduction of the width of the space-charge region at the interface between metal and irradiated silicon carbide after the post-implant annealing [5]. Thus, the probability increases that electrons cross the barrier via the quantum tunneling effect, which results in a raised current flow as can be seen [1].…”

Section: Resultsmentioning

confidence: 99%

“…A second explanation is the formation of a carbon layer or rather a multilayer graphene, which can decrease the Schottky barrier height of the interface [5]. According to the high temperatures that temporary occurs at laser annealing treatment the 4H-SiC surface is melting [6].…”

Section: Resultsmentioning

confidence: 99%

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Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC

Hellinger

Rusch

Rommel

et al. 2020

MSF

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In this work, pulsed-laser-based tempering was applied for post-implant annealing of n-type N-doped 4H-SiC in order to electrically activate the dopants and to rebuild the crystal structure. The annealing was performed by a frequency-tripled Nd:YVO4 laser with a pulse duration of 60 ns. To evaluate the effects of post-implant annealing, JBS diodes were electrically characterized. The results were compared with implanted, not post-annealed JBS diodes. The electrical measurements showed a significant on-state voltage drop of 40 mV at 6 A for post-implant laser annealed diodes compared to not post-implant annealed diodes.

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“…5) On the other hand, non-contact methods avoid the contamination and uncertainties encountered by contact methods. 6,7) IR thermometers [8][9][10][11][12][13][14] have been the primary method for measuring wafer temperature during URTA, in spite of existing problems in plasma processing. 2) More importantly, none of these methods can measure the internal wafer temperature during URTA.…”

Section: Introductionmentioning

confidence: 99%

Development of a real-time temperature measurement technique for SiC wafer during ultra-rapid thermal annealing based on optical-interference contactless thermometry (OICT)

Hanafusa

Higashi

2023

Jpn. J. Appl. Phys.

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Real-time temperature measurement technique with high spatial (≤20 μm) and temporal (≤1 μs) resolutions for SiC wafer during ultra-rapid thermal annealing (URTA) has been developed based on optical-interference contactless thermometry (OICT). This technique consists of hardware (OICT imaging setup) and software (fast temperature extraction program). Under URTA by atmospheric-pressure thermal plasma jet (TPJ), clear variation of optical interference fringes was observed by a high-speed camera (HSC) and then analyzed by a fast temperature extraction program using image preprocessing and a database. 3.5-dimensional (x, y, z and time) temperature distribution in SiC wafer was obtained within 0.43 second.

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Formation of Ohmic contacts on laser irradiated n-type 6H-SiC without thermal annealing

Cited by 13 publications

References 39 publications

A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability

A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability

Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC

Development of a real-time temperature measurement technique for SiC wafer during ultra-rapid thermal annealing based on optical-interference contactless thermometry (OICT)

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