Formation of Nanostructured Layers for Passivation of High Power Silicon Devices

Šalucha, D.; Šimkienė, I.; Sabataityte, J.

doi:10.12693/aphyspola.113.1079

Cited by 4 publications

(7 citation statements)

References 8 publications

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“…This process indicates the electrochemical origin of the reaction. In HF-HNO 3 mixtures the electrochemical origin of etching process is confirmed by the formation of porous Si layers [9]. On the other hand, the presence of several combined equilibria between different nitrogen oxides was proposed [5] to lead to the formation of nitrous acid as a reactive species in the etching process (3), (4).…”

Section: Resultsmentioning

confidence: 99%

Chemical etching of isolation grooves in high-power silicon devices

Šalucha¹,

Šimkienė²

2009

Lithuanian J. Phys.

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The procedure of wet chemical etching, which plays an important role in the fabrication of high-power Si devices in standard commercial equipment, is discussed. The characteristics of isolation grooves in Si high-voltage thyristors and diodes have been investigated, with respect to etchants and wet etching conditions. It has been found that the standard deviation in the depth values of isolation grooves produced in the Si wafer of 125 mm in diameter is reduced to 0.85 µm using a proposed modified technological procedure.

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Section: Resultsmentioning

confidence: 99%

Chemical etching of isolation grooves in high-power silicon devices

Šalucha¹,

Šimkienė²

2009

Lithuanian J. Phys.

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“…Where B is the FWHM in radians, K is the Scherrer constant (1 > K > 0.89), λ is the wavelength in nanometers, θ B in radians is the diffraction angle and L the mean crystallite size [11]. The crystallites size obtained for crystalline and porous silicon samples are shown in Table (1), when estimated by the Scherrer equation, a significant crystallites size decrease trend can be clearly noted on increasing etching times and current density, in the case of porous samples, nanometric dimensions are achieved in considerably shorter times.…”

Section: A Structural Propertiesmentioning

confidence: 99%

“…From the table (1) we shown in different etching process will lead to form PS layer with higher energy bandgap and smaller silicon nanosizes within the PS layer, which is bigger than that for crystalline silicon substrate 1.12 eV (indirect, 300K) [14].…”

Section: A Structural Propertiesmentioning

confidence: 99%

“…orous silicon (PS) consists of a network of nanoscale sized silicon wires and voids which formed when crystalline silicon wafers are etched electrochemically in hydrofluoric acid based electrolyte solution under constant anodization conditions [1]. The optical properties of porous silicon (direct gap, low reflectivity, variable refractive index, red photoluminescence, randomized morphological structure and possibility of band gap engineering) make this material to be a good candidate for photovoltaic applications.…”

Section: Introductionmentioning

confidence: 99%

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Structural, Chemical and Morphological of Porous Silicon Produced by Electrochemical Etching

Salman¹,

Sultan²,

Nayef³

2012

ETJ

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In this paper, the nanocrystalline porous silicon (PS) films is prepared by electrochemical etching of p-type silicon wafer with different currents density (15 and 30 mA/cm 2 ) and etching times on the formation nano-sized pore array with a dimension of around few hundreds nanometric. The films were characterized by the measurement of XRD, FTIR spectroscopy and atomic force microscopy properties. We have estimated crystallites size from X-Ray diffraction about nanoscale for porous silicon and Atomic Force microscopy confirms the nanometric size Chemical fictionalization during the electrochemical etching show on surface chemical composition of PS. The etching possesses inhomogeneous microstructures that contain a-Si clusters (Si 3 -Si-H) dispersed in amorphous silica matrix and (O-SiO, C-SiO). From the FTIR analyses showed that the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si-H bonds.The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increases.

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“…PS can be considered as a silicon crystal having a network of voids in it. The nanosized voids in the Si bulk result in a sponge-like structure of pores and channels surrounded with a skeleton of crystalline Si nanowires [4].…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Nanostructure Porous Silicon Prepared by Anodization Technique

Nayef¹,

Jaafar²

2013

ETJ

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Porous silicon (PS) layers are prepared by anodization for different current densities. The samples are then characterized the nanocrystalline porous silicon layer by X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Fourier Transform Infrared (FTIR), Reflectivity and Raman. PS layers were formed on a p-type Si wafer. anodized electrically with a 10 and 40 mA/cm 2 current density for fixed 20 min etching times.We have estimated crystallites size from X-Ray diffraction about nanoscale for porous silicon and AFM confirms the nanometric size and therefore optical properties about nanocrystalline silicon yields a Raman spectrum showing a broadened peak shifted below 520 cm -1 .

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Formation of Nanostructured Layers for Passivation of High Power Silicon Devices

Cited by 4 publications

References 8 publications

Chemical etching of isolation grooves in high-power silicon devices

Chemical etching of isolation grooves in high-power silicon devices

Structural, Chemical and Morphological of Porous Silicon Produced by Electrochemical Etching

Characteristics of Nanostructure Porous Silicon Prepared by Anodization Technique

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