Formation of longitudinal aggregation of inclusions in bulk sapphire and yttrium‐aluminum garnet grown by horizontal directed crystallization method

Nizhankovskyi, S.V.; Tan'ko, A.V.; Sidelnikova, N. S.; Adonkin, G. T.

doi:10.1002/crat.201400430

Cited by 11 publications

(1 citation statement)

References 7 publications

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“…The second‐phase particles (precipitation and inclusion) are the most studied harmful defect types in compound crystals, which markedly affect the optical and electronic device quality . In addition, other defects, such as dislocations and twins, could be introduced by inclusion.…”

Section: Introductionmentioning

confidence: 99%

Investigation of morphology evolution of the In‐rich inclusions and the corresponding defects in InP single crystals

Wang

Sun

Gao

et al. 2015

Crystal Research and Technology

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Submicron, micron and millimeter‐scale In‐rich inclusions with different polyhedral morphologies are observed, which are directionally embedded in the InP matrix along <011> direction. The arrangement direction and morphological change of the In‐rich inclusions at different scales are investigated to reveal their morphology evolution. The relative size of the facets ({100} and {111}P/In) bounding the polyhedral In‐rich inclusions is different from the reported results in other crystals, especially when the size of In‐rich inclusions is up to millimeter‐scale. The growth rate dispersion effect and the initial morphologies of the In‐rich droplets have an obvious effect on the final shape of the In‐rich inclusions. Dislocation enrichment surrounding the In‐rich inclusion is observed, which is contributed to the volume expansion of liquid‐solid phase transition and the difference of the thermal expansion coefficient and thermal conductivity between In‐rich droplet and InP matrix. The size and shape of the dislocation enriched region are closely related to the size and shape of the originating In‐rich droplet and the growth condition.

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Section: Introductionmentioning

confidence: 99%