Formation of interfaces in InGaP/GaAs/InGaP quantum wells

Kúdela, R.; Kučera, M.; Olejníková, B.; Eliáš, P.; Hasenöhrl, S.; Novák, J.

doi:10.1016/s0022-0248(00)00229-3

Cited by 23 publications

(23 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…By growing an additional GaP or a large-bandgap AlGaAs layer, the formation of the low-bandgap interface layer can be effectively suppressed. 3,4,7 In this paper, we show that under optimized growth conditions, indium surface segregation plays an important role in the formation of a low-bandgap interface layer in the growth of InGaP/ GaAs heterostructures.…”

Section: Introductionmentioning

confidence: 90%

“…In order to improve the performance of InGaP/GaAs-based devices, research on controlling the interface quality has been reported since the 1980s. 2,[6][7][8][9] Through controlling the switching sequence of source gases at the interfaces during the growth interruption between layers, In and As carry-over and arsenic-phosphorus exchange at the interfaces have been extensively investigated. In spite of the extensive studies of the interface control, there is no general agreement upon the dominant mechanism governing the interface formation, probably due to differences in reactor configuration.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices

Zhang

Ryou

Dupuis

et al. 2006

J. Electron. Mater.

View full text Add to dashboard Cite

Lattice-matched In 0.49 Ga 0.51 P/GaAs superlattices were grown on (001) GaAs substrates using metalorganic chemical vapor deposition. The interface properties were characterized by photoluminescence, transmission electron microscopy, and x-ray diffraction. By varying the growth temperature, the precursor flow rates, and the growth interruption at the interfaces, we found that, while arsenic and phosphorus carry over have some effect on the formation of a lowbandgap InGaAsP quaternary layer at the interfaces, the In surface segregation seems to play an important role in the formation of the interface quaternary layer. Evidence of this indium segregation comes from x-ray and photoluminescence studies of samples grown at different temperatures. These studies show that the formation of an interfacial layer is more prominent when the growth temperature is higher. Growing a thin (;1 monolayer thick) GaP intentional interfacial layer on top of the InGaP before the growth of the GaAs layer at the P!As transition effectively suppresses the formation of the low-bandgap unintentional interface layer. On the other hand, the growth of a thin GaAsP (or GaP) layer before the growth of the InGaP layer, at the As!P transition increases the formation of a low-bandgap interfacial layer. This nonequivalent effect of a GaP layer at the two interfaces on the PL properties is discussed.

show abstract

Section: Introductionmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices

Zhang

Ryou

Dupuis

et al. 2006

J. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…A common problem during InGaP/GaAs growth is the mutual diffusion and atomic exchange of species at the heterointerface, which smooth out its abruptness and degrade device performance. 46,47 Several methods for overcoming this problem have been proposed, including inserting an intermediate layer between InGaP and GaAs, 48 hydride flow modulation 49 or the use of particular gas switching sequences. 50 Thermodynamical analysis of InGaP/GaAs interface has been performed and the nature of the phenomenon suggested.…”

Section: Ingapmentioning

confidence: 99%

The potential of III‐V semiconductors as terrestrial photovoltaic devices

Bosi

Pelosi

2006

Progress in Photovoltaics

175

View full text Add to dashboard Cite

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article will review the situation of semiconductor solar cell materials, focusing on Si, GaAs, InGaP and multijunction solar cells and will discuss future trends and possibilities of bringing III-V technology from space to Earth

show abstract

“…InGaP/GaAs has a low conduction band offset that makes it very suitable for HBTs [9]. However, the InGaP/GaAs system has the drawback that an extra interlayer spontaneously forms at the GaAs-on-InGaP interface (inverted interface) [7][8][9][10][12][13][14][15][16][17][18][19][20][21]. The causes suggested in the literature for its formation are three: In carry-over, As/P exchange and P/As intermixing at the location of the inverted interface [7][8][9][10][12][13][14][15][16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%