Superlattices and Microstructures volume 45, issue 4-5, P451-457 2009 DOI: 10.1016/j.spmi.2008.10.019 View full text
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C. Frigeri, G. Attolini, M. Bosi, C. Pelosi, F. Germini

Abstract: a b s t r a c tAn evaluation of the composition of the extra interlayer at the GaAs-on-InGaP inverted interface in MOVPE grown In x Ga 1−x P/ GaAs heterostructures has been carried out by chemically sensitive (200) dark field TEM in the kinematical approximation. X-ray diffraction measurements have also been performed that showed that the extra interlayer had a negative strain to GaAs. In combination with this result the (200) dark field measurements allowed to establish that the extra interlayer can be eithe…

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