2021
DOI: 10.1002/adma.202007819
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Formation of Highly Doped Nanostripes in 2D Transition Metal Dichalcogenides via a Dislocation Climb Mechanism

Abstract: processes such as ion implantation can be used, but this approach tends to create undesirable defects, whose removal then requires additional annealing steps. Recently, lots of research attention has been focused on 2D materials, [1,2] as they not only exhibit great variety in electronic characteristics ranging from insulators to metals, but also possess unique properties related to their reduced dimensionality. While 2D materials can be doped with the same methods as bulk systems, there are approaches that ar… Show more

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Cited by 15 publications
(17 citation statements)
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References 35 publications
(37 reference statements)
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“…Such unique behavior can be explained by the climbing and migration of the dislocated cores due to the driving force to fill the vacancy lines. 8 Such directed alloys may complement traditionally doped alloys such as specific metal atoms (e.g., vanadium) alloyed with TMD crystals through a mild solution mixing and thermal annealing process. 13 Enhanced electrocatalytic 14 and ferromagnetism 15 behavior would emerge in some intentionally doped 2D alloys.…”
Section: E Directed Alloysmentioning
confidence: 99%
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“…Such unique behavior can be explained by the climbing and migration of the dislocated cores due to the driving force to fill the vacancy lines. 8 Such directed alloys may complement traditionally doped alloys such as specific metal atoms (e.g., vanadium) alloyed with TMD crystals through a mild solution mixing and thermal annealing process. 13 Enhanced electrocatalytic 14 and ferromagnetism 15 behavior would emerge in some intentionally doped 2D alloys.…”
Section: E Directed Alloysmentioning
confidence: 99%
“…During the second step of growth, MoS 2 prefers the higher reactive dislocation cores, thus pushing the dislocations away from the original interface, forming 1D MoS 2 subnanometer channels in the WSe 2 lattice. Furthermore, the artificial dislocation in the parent WSe 2 lattice can benefit the formation of 1D nanostripes with a high density of impurity atoms since the dislocation cores can either climb or migrate under the driving force to fill the vacancy lines, which enables an effective doping strategy for 2D crystals (Figure c). Defects from the substrate can also be employed for precision chemistry control.…”
Section: Approaches For Precision Chemistry In 2d Materialsmentioning
confidence: 99%
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“…Dislocations, a fundamental structural feature, widely exist in two-dimensional (2D) materials and their heterostructures. Dislocations play an important role in the local electronic and optical properties, especially for 2D semiconductors. , Most of the dislocation studies center on the intralayer domain boundary of 2D materials, such as graphene, hexagonal boron nitride (h-BN), , and transition-metal dichalcogenides (TMDs). ,, Recently, a newly identified class of dislocations was reported and named interlayer dislocations or van der Waals dislocations, ,,, which can be considered as the line defects of interlayer stacking. As an extension of this class, the line defects of a moiré pattern, a superlattice formed by layer stacking, can be understood as a dislocation of moiré lattice.…”
Section: Introductionmentioning
confidence: 99%
“…Dislocations play an important role in the local electronic and optical properties, especially for 2D semiconductors. 1,2 Most of the dislocation studies center on the intralayer domain boundary 3−7 of 2D materials, such as graphene, 8−12 hexagonal boron nitride (h-BN), 1,13−16 and transition-metal dichalcogenides (TMDs). 2,3,17 Recently, a newly identified class of dislocations was reported and named interlayer dislocations or van der Waals dislocations, 8,14,18,19 which can be considered as the line defects of interlayer stacking.…”
Section: ■ Introductionmentioning
confidence: 99%