Formation of graded band-gap in CdZnTe by YAG:Nd laser radiation

Medvíd, A.; Fedorenko, L.; Korbutjak, B.; Kryluk, S.; Yusupov, M.; Mychko, A.

doi:10.1016/j.radmeas.2007.01.070

Cited by 14 publications

(12 citation statements)

References 9 publications

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“…ture gradient field. At the same time, nanostructure on the surface of Ge, Si, [5] and CdZnTe [17] and graded bandgap in CdZnTe with opposite direction of gradient at low intensity LR, is described in paper [16]. In our experiment [17] it is formed at higher intensities, for example, nanostructure is formed at intensities I > 4.0 MW/cm …”

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confidence: 51%

“…Of course, the threshold intensity and/or dose of LR depends on semiconductor material atoms' bond energy in crystalline lattice, therefore it depends on melting temperature. So, the threshold intensity of LR for InSb is about 1.1 MW/cm 2 , for Ge it is about 2.0 MW/cm 2 and for Si it is about 5.0 MW/cm 2 (for second harmonica of Nd:YAG laser) for p-n junction formation [12,14] and about 0.2 MW/cm 2 for graded band-gap in CdZnTe solid solution [16], due to redistribution of Cd and Zn atoms in temperaDynamics of nanostructures (nanocones and nanocavties) formation on surface of semiconductors by laser radiation based on Thermogradient effect (TGE) is studied. Nanostructures formation of both nanohills and nanocavities are explained by point defects redistribution in gradient of temperature at the irradiated surface.…”

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confidence: 99%

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Dynamics of nanostructure formation using point defects on semiconductors by laser radiation

Medvíd

Onufrijevs

Daukšta

et al. 2009

Phys. Status Solidi (c)

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Dynamics of nanostructures (nanocones and nanocavties) formation on surface of semiconductors by laser radiation based on Thermogradient effect (TGE) is studied. Nanostructures formation of both nanohills and nanocavities are explained by point defects redistribution in gradient of temperature at the irradiated surface. Study of photoluminescence (PL), atomic force microscopy (AFM) and Raman back‐scattering spectra speak in favour of presence of quantum confinement effect (QCE) on the top of nanocones on the irradiated surface of semiconductor single crystals. Aggregation of vacancies under the irradiated surface forms nanocavities. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 51%

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confidence: 99%

Dynamics of nanostructure formation using point defects on semiconductors by laser radiation

Medvíd

Onufrijevs

Daukšta

et al. 2009

Phys. Status Solidi (c)

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“…The laser processing of CdTe is generating various point defects, which are redistributed under the action of the temperature gradient [3][4][5][6][7][8].…”

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confidence: 99%

“…The crystals were of the size of 10×10×1 mm 3 . A Q-modulated Nd:YAG laser was used as the pulsed source of strongly absorbed radiation with wavelength λ = 0.532 μm and intensity from 4 to 12 MW/cm 2 .…”

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confidence: 99%

Exciton quantum confinement effect in nanostructures formed by laser radiation on the surface of CdZnTe ternary compound

Medvíd

Mychko

Strilchyk

et al. 2008

Phys. Status Solidi (c)

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Self‐organizing structures of nanometer size are observed on the surface of CdZnTe crystal irradiated by strongly absorbed Nd:YAG laser radiation (LR) at intensities within 4–12 MW/cm2. The effect of exciton quantum confinement manifested by a shift to higher energies of the A0,X exciton band of the photo‐luminescent spectrum is present in structures of 10–15 nm in diameter at the top of nano‐hills. A graded band gap structure with optical window is formed at the top of nano‐hills. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Nowadays, lasers are used for formation of the following semiconductors' structures: p-n junctions, heterostructures Ge/SiGe, CdTe/CdZnTe, and graded band gap (Medvid' & Fedorenko 1999;Medvid', Mychko et al, 2007;Medvid', I.Dmytruk et al, 2007;Medvid', P.Onufrijevs et al, 2008;Medvid', Mychko et al, 2008;Medvid', Onufrijevs et al, 2010;Medvid', Mychko et al, 2010).…”

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confidence: 99%