Dynamics of nanostructure formation using point defects on semiconductors by laser radiation

Abstract

Dynamics of nanostructures (nanocones and nanocavties) formation on surface of semiconductors by laser radiation based on Thermogradient effect (TGE) is studied. Nanostructures formation of both nanohills and nanocavities are explained by point defects redistribution in gradient of temperature at the irradiated surface. Study of photoluminescence (PL), atomic force microscopy (AFM) and Raman back‐scattering spectra speak in favour of presence of quantum confinement effect (QCE) on the top of nanocones on the irradiated surface of semiconductor single crystals. Aggregation of vacancies under the irradiated surface forms nanocavities. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

“…Vacancies are concentrated under the top layer forming a buried layer with mechanical tension due to the absence of atoms. Sometimes vacancies form nanocavities [ 17 ]. At the second stage of the process, nanocones are formed on the irradiated surface of the semiconductors due to plastic deformation of the top layer in the same way as in the previous case with semiconductor solid solutions.…”

Application of Nd:YAG Laser in Semiconductors’ Nanotechnology

“…Vacancies are concentrated under the top layer forming a buried layer with mechanical tension due to absence of atoms. Sometimes vacancies form nanocavities (Medvid, 2009). At the second stage of the process nanocones are formed on the irradiated surface of the semiconductors due to plastic deformation of the top layer in the same way as in the previous case with semiconductor solid solutions.…”