Formation of cubic silicon carbide layers on silicon under the action of continuous and pulsed carbon ion beams

Synthesis of Silicon Carbide Dendrite by the Arc Plasma Process and Observation of Nanorod Bundles in the Dendrite Arm

“…Only two works come to sight about possible SiC dendrite microstructure: one on seed crystal during Czochralski growth of Si single crystal, 13 and the other in a case of carbon ion implantation in Si. 14 This communication, for the first time, reports the direct synthesis of SiC dendrite by carbothermic reduction of rice husk ash in an arc plasma and discusses its microstructural characterization. Besides improving the purity of the product, 15 the process has an advantage of reducing the synthesis time significantly compared with an industrial process like Acheson's process, because of faster reaction kinetics of plasma state due to participation of ions and other activated species.…”

“…However, no one appears to have reported SiC dendrite growth yet by using the above methods or by any other method. Only two works come to sight about possible SiC dendrite microstructure: one on seed crystal during Czochralski growth of Si single crystal, 13 and the other in a case of carbon ion implantation in Si 14 . This communication, for the first time, reports the direct synthesis of SiC dendrite by carbothermic reduction of rice husk ash in an arc plasma and discusses its microstructural characterization.…”