Raman Light Scattering in Silicon with the Crystal Structure Damaged by Implantation of Carbon Ions

Igo, A. V.

doi:10.1134/s0030400x20080135

Cited by 6 publications

(3 citation statements)

References 12 publications

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“…A schematic diagram of a photodiode with its various layers is shown in Figure 1. We determine the radiation intensities according to the Bouguer-Lambert-Beer law [12]:…”

Section: Calculationsmentioning

confidence: 99%

Study of the Charge Carrier Collection Coefficient of Silicon p-i-n Photodiodes

Kukurudziak,

Maistruk

2024

East Eur. J. Phys.

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The paper investigates the collection coefficient of minority charge carriers in silicon p-i-n photodiodes and the influence of certain technological factors on it. It has been found that the diffusion length of minority charge carriers and the resistivity of the material have a significant effect on the value of the collection coefficient, since the collection area of photogenerated charge carriers increases with increasing these parameters. It was also found that an effective method to increase the collection coefficient of photodiodes is to ensure that the thickness of the high-resistance region of the photodiode is equal to the sum of the diffusion length of minority charge carriers and the width of the space charge region. The effect of the concentration of dopants on the responsivity and collection coefficient is investigated. It was found that, in contrast to the calculated data, in which the collection coefficient increases with decreasing concentrations of phosphorus and boron, in the experimental data, with decreasing concentrations of impurities, the responsivity and, accordingly, the collection coefficient decrease due to a decrease in the degree of heterogenization and, as a result, a decrease in the width of the space charge region and the diffusion length of minority charge carriers.

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“…A schematic diagram of a photodiode with its various layers is shown in Figure 1. We determine the radiation intensities according to the Bouguer-Lambert-Beer law [12]:…”

Section: Calculationsmentioning

confidence: 99%

Study of the Charge Carrier Collection Coefficient of Silicon p-i-n Photodiodes

Kukurudziak,

Maistruk

2024

East Eur. J. Phys.

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“…[135] This technique provides insights into the lattice vibration, [4] electronic [5] and crystal structure of a material. [136][137][138][139] The presence of G and D bands, generally occurring at 1550-1600 cm À 1 and 1350-1380 cm À 1 , respectively, is a widely reported characteristic feature of GQDs. [140] The G and D peaks are indicative of the E 2g vibration mode in aromatic domains present in 2D structures (sp 2 carbon atoms) and sp 3 defects, respectively.…”

Section: Raman Spectramentioning

confidence: 99%

“…Inelastic scattering of photons on interaction with phonons in a molecule results in stokes/anti‐stokes shift of incident EM waves that are characteristic of the molecular vibrations in a material [135] . This technique provides insights into the lattice vibration, [4] electronic [5] and crystal structure of a material [136–139] . The presence of G and D bands, generally occurring at 1550–1600 cm −1 and 1350–1380 cm −1 , respectively, is a widely reported characteristic feature of GQDs [140] .…”

Section: Characterization Of Gqdsmentioning

confidence: 99%

Graphene Quantum Dots – Hydrothermal Green Synthesis, Material Characterization and Prospects for Cervical Cancer Diagnosis Applications: A Review

et al. 2022

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Graphene Quantum Dots (GQDs) have attracted significant attention and applications in the field of biosensors, particularly for early detection of cervical cancer, due to their excellent electrochemical, optical, and biocompatibility properties. In this review, recent results on green methods for the synthesis of GQDs as well as their characterization techniques are discussed, with particular emphasis on structural, morphological, elemental, optical, and functional group analysis. In addition, a comprehensive overview of how the electrochemical and biocompatibility properties of GQDs enable their use in the development of sensing elements for biosensing applications is presented. This paper also highlights the most recent developments in the fabrication of GQDs-based biosensors for cervical cancer detection. Finally, the future prospects are critically discussed to assist researchers in identifying the shortcomings of the existing biosensors and establishing new methods centered on the development of unique, efficient, sensitive and selective GQDs-based biosensors.

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Silicon p-i-n Photodiode with Reduced Background Radiation

Kukurudziak

2023

2023 IEEE 4th KhPI Week on Advanced Technology (KhPIWeek)

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Raman Light Scattering in Silicon with the Crystal Structure Damaged by Implantation of Carbon Ions

Cited by 6 publications

References 12 publications

Study of the Charge Carrier Collection Coefficient of Silicon p-i-n Photodiodes

Study of the Charge Carrier Collection Coefficient of Silicon p-i-n Photodiodes

Graphene Quantum Dots – Hydrothermal Green Synthesis, Material Characterization and Prospects for Cervical Cancer Diagnosis Applications: A Review

Silicon p-i-n Photodiode with Reduced Background Radiation

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