Formation of Cu nanocrystals on 3-mercaptopropyltrimethoxysilane monolayer by pulsed iodine-assisted chemical vapor deposition for nonvolatile memory applications

Park, Hyuk; Kim, Ara; Lee, Chiyoung; Lee, Jang‐Sik; Lee, Jaegab

doi:10.1063/1.3139072

Cited by 9 publications

(6 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Park et al reportedly grew a Cu nanocrystal layer on the 3-mercaptopropyltrimethoxysilanetreated SiO 2 /Si substrates. [28] A cyclic CVD (pulsed iodineassisted CVD) process was used to grow Cu nanocrystals in situ. The diameter and density of Cu nanocrystals can be controlled by the number of deposition cycles.…”

Section: Silicon-based Nfgm Devicesmentioning

confidence: 99%

Review paper: Nano-floating gate memory devices

Lee

2011

Electron. Mater. Lett.

Self Cite

View full text Add to dashboard Cite

In recent decades, memory device technology has advanced through active research and the development of innovative technologies. Single transistor-based flash memory device is one of the most widely used forms of memory devices because their device structure is simple and the scaling is feasible. A nano-floating gate memory (NFGM) device is a kind of flash memory devices that uses nanocrystals as a charge-trapping element. The use of nanocrystals has advantages over memory devices that rely on other methods such as discontinuous trap sites and controllable trap levels. Nowadays considerable progress has been made in the field of NFGM devices, and novel application areas have been explored extensively. This review article focuses on new technologies that are advancing these developments. The discussion highlights recent efforts and research activities regarding the fabrication and characterization of nonvolatile memory devices that use a nanocrystal layer as a charge-trapping element. The review concludes with an analysis of device fabrication strategies and device architectures of NFGM devices for possible application to devices that are organic, printed, and flexible.

show abstract

Section: Silicon-based Nfgm Devicesmentioning

confidence: 99%

Review paper: Nano-floating gate memory devices

Lee

2011

Electron. Mater. Lett.

Self Cite

View full text Add to dashboard Cite

show abstract

“…1). MPTMS has been used for multiple applications, including gold film adhesion, [7][8][9][10][11][12][13][14][15][16] and characterization of MPTMS monolayers, with and without attached gold, suggests they will work well as a component of back-surface mirrors. [17][18][19] The main question to be addressed is whether the monolayer of MPTMS between the substrate and the mirror surface will significantly affect the reflectivity of the metal in the spectral region of interest.…”

Section: Introductionmentioning

confidence: 99%

Back-Surface Gold Mirrors for Vibrationally Resonant Sum-Frequency (VR-SFG) Spectroscopy Using 3-Mercaptopropyltrimethoxysilane as an Adhesion Promoter

et al. 2011

View full text Add to dashboard Cite

Back-surface mirrors are needed as reference materials for vibrationally resonant sum-frequency generation (VR-SFG) probing of liquid-solid interfaces. Conventional noble metal mirrors are not suitable for back-surface applications due to the presence of a metal adhesion layer (chromium or titanium) between the window substrate and the reflective metal surface. Using vapor deposited 3-mercaptopropyltrimethoxysilane (MPTMS) as a bi-functional adhesion promoter, gold mirrors were fabricated on fused silica substrates. These mirrors exhibit excellent gold adhesion as determined by the Scotch(®) tape test. They also produce minimal spectroscopic interference in the C-H stretching region (2800-3000 cm(-1)), as characterized by VR-SFG. These mirrors are thus robust and can be used as back-surface mirrors for a variety of applications, including reference mirrors for VR-SFG.

show abstract

“…In these applications, engineering of NC arrays is an important issue for the optimization of device performance [8][9][10]. While various methods, including post-annealing of ultra-thin films [11], delivery of colloidal NCs [6,12], chemical vapor deposition (CVD) [13] and atomic layer deposition (ALD) [5,14,15], have been introduced to deposit NCs, independent control of spatial density and size of NCs is still challenging due to the simultaneous occurrence of nucleation and growth during the deposition.…”

Section: Introductionmentioning

confidence: 99%

Controlling spatial density and size of nanocrystals by two-step atomic layer deposition

Lee¹,

Yim²,

Kim³

et al. 2011

Nanotechnology

View full text Add to dashboard Cite

Two-step atomic layer deposition (ALD) is proposed in order to control both the spatial density and size of nanocrystals (NCs) via modulation of the nucleation rate during deposition. In this process, two different deposition conditions are sequentially used: a high nucleation rate condition for the formation of high density NCs and a low nucleation rate condition with a slow growth rate for the subsequent growth of pre-formed NCs. To control the nucleation rate of Ru during ALD, pulsing time and carrier flow rate of the Ru precursor are varied. By controlling those factors, both the film growth rate and a nucleation rate of Ru are decreased considerably. Two-step ALD of Ru NCs using the surface-saturated condition followed by the reduced condition allows for variation of the spatial density from 7.9 × 10(11) to 3.2 × 10(12) cm(-2) and variation of the average diameter from 1.9 to 3.3 nm.

show abstract

Formation of Cu nanocrystals on 3-mercaptopropyltrimethoxysilane monolayer by pulsed iodine-assisted chemical vapor deposition for nonvolatile memory applications

Cited by 9 publications

References 22 publications

Review paper: Nano-floating gate memory devices

Review paper: Nano-floating gate memory devices

Back-Surface Gold Mirrors for Vibrationally Resonant Sum-Frequency (VR-SFG) Spectroscopy Using 3-Mercaptopropyltrimethoxysilane as an Adhesion Promoter

Controlling spatial density and size of nanocrystals by two-step atomic layer deposition

Contact Info

Product

Resources

About