Formation of copper nitrides in the course of implanting copper with large doses of nitrogen ions

Karwat, C.; Комаров, Ф. Ф.; Komarov, A. F.; Latuszynski, A.

doi:10.1002/pssa.2211570220

Cited by 12 publications

(3 citation statements)

References 2 publications

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“…The radiation-enhanced diffusivities of In and As atoms in Si at 500 • C were calculated using a numerical model described in Ref. [5]. The model takes into account the effects of ion-beam sputtering and radiation-enhanced diffusion.…”

Section: Rbs Datamentioning

confidence: 99%

Effect of implantation and annealing regimes on ion-beam synthesis of InAs nanocrystals

Komarov¹,

Власукова²,

Milchanin³

et al. 2009

Lithuanian J. Phys.

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We reported the formation of nanosized InAs crystallites in silicon wafers by means of As (245 keV, 4.1·10 16 cm −2 ) and In (350 keV, 3.7·10 16 cm −2 ) implantation. The implantation was carried out at 25 and 500• C. In order to verify the effect of getter on precipitates growth an additional procedure was carried out for the samples implanted with As and In species at the room temperature. This procedure included the implantation of H + 2 ions with the energy of 100 keV at 1.2·1016 cm −2 . Afterwards, the samples were annealed at 900• C for 60 min in inert ambient. In order to characterize the implanted layers, Rutherford backscattering spectrometry in combination with the channelling (RBS / C) and transmission electron microscopy (TEM) techniques were used. TEM has revealed InAs nanocrystals in implanted samples after the annealing. It has been shown that average size and size distribution of InAs clusters depend on implantation temperature and annealing duration. Significant diffusional redistribution of implanted species has been revealed after "hot" implantation and post-implantation annealing. We have suggested that it is caused by non-equilibrium diffusion. The radiation-enhanced diffusivities at "hot" implantation have been determined for the abovementioned experimental conditions.

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Section: Rbs Datamentioning

confidence: 99%

Effect of implantation and annealing regimes on ion-beam synthesis of InAs nanocrystals

Komarov¹,

Власукова²,

Milchanin³

et al. 2009

Lithuanian J. Phys.

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“…This generates a need to cor rect the existing models [6,7] and the diffusion kinetics parameters used in them [8,9]. In previous works of our team, the high dose implantation of atomic and molec ular nitrogen into iron [8], silicon [9], and copper [10] was studied for the case when dopant atoms chemically interact with target atoms to produce stable iron, sili con, and copper nitrides.…”

Section: Introductionmentioning

confidence: 99%

“…Equations (10), (19), and (20) constitute a set of convection-diffusion-reaction equations. Such a model is a basic model [4] among those used to describe the impurity redistribution at relatively high integral implantation doses.…”

mentioning

confidence: 99%

Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

et al. 2015

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A physicomathematical model and dedicated software are developed for simulating high dose implantation of two types of atoms to form InAs nanoclusters in a silicon matrix. The model is based on solv ing a set of convection-diffusion-reaction equations. The synthesis of InAs nanoclusters produced by high dose implantation of As + and In + ions into crystalline silicon is numerically simulated. Using the methods of transmission electron microscopy and Raman scattering, it is found that InAs nanoclusters are crystalline and have a mean diameter of 7 nm. After As implantation (170 keV, 3.2 × 10 16 cm -2 ) and In implantation (250 keV, 2.8 × 10 16 cm -2 ) into silicon at 500°C, the nanoclusters are distributed with a density of 2.87 × 10 11 cm -2 . From experimental data and theoretical results, the coefficients of radiation stimulated diffusion of In and As in silicon, as well as the fraction of the implant in the bound state (i.e., entering into InAs nan oclusters), are determined. Experimental data are compared with simulation results.

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Laser nitriding of the surface of phosphor bronze

Yilbaş

Akhtar

Karataş

2012

Int J Adv Manuf Technol

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Formation of copper nitrides in the course of implanting copper with large doses of nitrogen ions

Cited by 12 publications

References 2 publications

Effect of implantation and annealing regimes on ion-beam synthesis of InAs nanocrystals

Effect of implantation and annealing regimes on ion-beam synthesis of InAs nanocrystals

Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

Laser nitriding of the surface of phosphor bronze

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