Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)

Copel, M.; Cartier, E.; Ross, FM

doi:10.1063/1.1355002

Cited by 194 publications

(130 citation statements)

References 7 publications

Supporting

Mentioning

115

Contrasting

Order By: Relevance

“…Since the dielectric constants ε of ionic conductors do not have much difference with each other, e.g. both the ε of YSZ and LSO are about 30 at room temperature [20,21], so the higher relaxation frequency f should be relate to the higher conductivity. This indicates that the composite materials have higher conductivity comparing to the single phase YSZ.…”

Section: Discussionmentioning

confidence: 99%

Synthesis and characterization of Zr0.85Y0.15O1.925-La9.33Si6O26 composite electrolyte for application in SOFCs

et al. 2012

View full text Add to dashboard Cite

(LSO) have been synthesized by a modified coprecipitation method. X-ray diffraction, electron microscope, and complex impedance were adopted to investigate the phase component, microstructures, and conductivities, respectively. The results show that the average grain sizes of the composite powders and as-sintered pellets are less than 20 nm and 200 nm, respectively. The conductivity of the composite materials composed of 94 wt% YSZ and 6 wt% LSO is 0.215 S/cm at 700 ℃. The conductivity of the composite is three times higher than that of the polycrystalline YSZ and has two orders in magnitude higher than that of the polycrystalline LSO at 700 ℃. By analyzing the impedance spectra and modulus spectra, the grain-boundary effect on the conductivity improvement is investigated and the conductive mechanisms of the composite materials are discussed.

show abstract

Section: Discussionmentioning

confidence: 99%

Synthesis and characterization of Zr0.85Y0.15O1.925-La9.33Si6O26 composite electrolyte for application in SOFCs

et al. 2012

View full text Add to dashboard Cite

show abstract

“…1,5,9 Upon diffusion, the aluminum and rare earth metals were found to react with the gate dielectric and interfacial SiO 2 layers. Some studies suggested the formation of silicates such as LaSiO x at the interface near the substrate, 14 while others indicated the formation of a HfLaSiO gate dielectric as a result of these reactions.…”

Section: à3mentioning

confidence: 99%

Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

Caraveo-Frescas

Wang

Schwingenschlögl

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.

show abstract

“…15 Regardless of the employed growth technique, LaSiO formation was indeed already reported either in as-deposited or in annealed La-based stacks. 63,64 Since the formation of such a LaSiO region can be mainly attributed to thermodynamical factors, it can be considered independent of the total film thickness. On the contrary, the total film thickness plays a fundamental role in establishing the electrical properties of the annealed layers.…”

Section: Si and Ge Diffusion: Formation Of Lasio And Lageo Speciesmentioning

confidence: 99%

O 3 -based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

Lamagna

Wiemer

Perego

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

The hexagonal phase of La2O3 is obtained upon vacuum annealing of hydroxilated La2O3 films grown with atomic layer deposition at 200 °C using La(PirCp)3 and O3. A dielectric constant value of 24±2 and 22±1 is obtained on Si-based and Ge-based metal-oxide-semiconductor capacitors, respectively. However, the relatively good La2O3 dielectric properties are associated with significant interface reactivity on both semiconductor substrates. This leads to the identification of a minimum critical thickness that limits the scaling down of the equivalent oxide thickness of the stack. These findings are explained by the spontaneous formation of lanthanum silicate and germanate species which takes place during the growth and also upon annealing. Although the ultimate film thickness scalability remains an unsolved concern, the use of an O3-based process is demonstrated to be a suitable solution to fabricate La2O3 films that can be successfully converted into the high-k hexagonal phase.

show abstract

Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)

Cited by 194 publications

References 7 publications

Synthesis and characterization of Zr0.85Y0.15O1.925-La9.33Si6O26 composite electrolyte for application in SOFCs

Synthesis and characterization of Zr0.85Y0.15O1.925-La9.33Si6O26 composite electrolyte for application in SOFCs

Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

O 3 -based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

Contact Info

Product

Resources

About