Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si

Monakhov, Edouard; Avset, B. S.; Hallén, Anders; Svensson, B. G.

doi:10.1103/physrevb.65.233207

Cited by 62 publications

(63 citation statements)

References 18 publications

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“…were already investigated in detail and no correlation with the "macroscopic" behavior of the diodes could be established [35][36][37][38][39][40][41][42][43][44][45][46]. The main characteristics of defects, from the electrical point of view, are the emission rates of carriers in the conduction and valence bands given by:…”

Section: Defect Properties and Detector Performancementioning

confidence: 99%

Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Pintilie

Lindstroem

Junkes

et al. 2009

Nuclear Instruments and Methods in Physics Research Section A:

125

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This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60 Co-γ rays, 6 and 15 MeV electrons, 23 GeV protons and reactor neutrons revealed the existence of point defects and cluster related centers having a strong impact on damage properties of Si diodes. The detailed relation between the "microscopic" reasons as based on defect analysis and their "macroscopic" consequences for detector performance are presented. In particular, it is shown that the changes in the Si device properties after exposure to high levels of 60 Co-γ doses can be completely understood by the formation of two point defects, both depending strongly on the oxygen concentration in the silicon bulk. Specific for hadron irradiation are the annealing effects which decrease respectively increase the originally observed damage effects as seen by the changes of the depletion voltage. A group of three cluster related defects, revealed as deep hole traps, proved to be responsible specifically for the reverse annealing. Their formation is not affected by the oxygen content or silicon growth procedure suggesting that they are complexes of multi-vacancies located inside extended disordered regions.

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Section: Defect Properties and Detector Performancementioning

confidence: 99%

Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Pintilie

Lindstroem

Junkes

et al. 2009

Nuclear Instruments and Methods in Physics Research Section A:

125

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show abstract

“…The shift ceases after 1 h at 300 °C, indicating that V 2 is annealed out and only the V 2 O levels persist. Capture cross section measurements were performed by varying the filling pulse width and the results suggest strongly that the V 2 O levels correspond to a singly and doubly negative charge state of the same center [17]. This conclusion is further substantiated by that the amplitudes of the V 2 O(=/-) and V 2 O(-/0) levels show a close one-to-one proportionality both during formation and annealing.…”

Section: Resultsmentioning

confidence: 55%

“…(1) appears very likely and a similar conclusion would also hold for Czochralski-grown (CZ) Si samples (oxygen content ~5x10 17 to 1x10 18 cm -3…”

Section: Resultsmentioning

confidence: 63%

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Defects and diffusion in high purity silicon for detector applications

Svensson

Monakhov

Alfieri

et al. 2004

phys. stat. sol. (c)

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In this contribution we review some recent results on defects occurring after irradiation and thermal treatment of silicon detectors for ionizing radiation. In particular, the annealing of the prominent divacancy centre and the concurrent growth of a new double acceptor centre, assigned to the divacancyoxygen pair, is treated in detail. The detectors were fabricated using oxygenated high purity float zone (FZ) silicon wafers of n-type in order to improve the radiation hardness. The results obtained have important implication on our current understanding of the degradation of silicon detectors at high radiation fluences and suggest that a new concept for optimised impurity/defect engineering needs to be developed.

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“…Changing of the Е v + 0.19 eV divacancy level position to values Е v + 0.22 eV; 0.24 eV; 0.26 eV and 0.29 eV, depended on temperature and time of the annealing, was observed in [21]. The lowering of the divacancy level / 0 2 V -from Е c -0.43 eV to Е c -0.47 eV in low-doped and oxygenated silicon after 220 °C annealing was defined in [22]. A modified / 0 2 V O -divacancy position is determined as Е c -0.50 ± 0.05 eV [23], though with considerable uncertainty.…”

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confidence: 99%

Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen

Dolgolenko

Litovchenko

Varentsov

et al. 2006

Physica Status Solidi (b)

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A comparative study is made on the radiation damage caused by fast-pile neutrons in n-Si with low and high concentrations of oxygen by measuring the effective carrier concentrations and energies of defects. The role of clusters in degrading Si parameters was studied both experimentally and theoretically. It has been shown experimentally that the fluence for which the carrier concentration tends to the intrinsic value does not depend on the oxygen concentration. The theoretical calculation has been carried out in the framework of Gossick's corrected model. The additional overlapping of clusters due to introduce of defects is explained. The model of the n → p conversion in n-Si with various oxygen concentrations is presented. It is shown that divacancy and di-interstitial congestions are responsible for the Fermi level position near the midgap at high fluences. Analysis of V ξ defect levels gave evidences of increase of level energy in the forbidden band on capture of the first or the second electron on the value ∆E = 0.33/ξ, where 1 ≤ ξ ≤ 5.

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Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si

Cited by 62 publications

References 18 publications

Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Defects and diffusion in high purity silicon for detector applications

Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen

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