Formation mechanism of Zn₂SiO₄crystal and amorphous SiO₂in ZnO/Si system

Abstract

In our recent study Xu et al (2002 Chem. Phys. Lett. 364 57-63), a phase transformation from the hexagonal to the tetragonal structure in the annealed ZnO films on silicon was studied by atomic force microscopy. Cathodoluminescence (CL) and glancing-angle x-ray diffraction analysis of the ZnO films indicated that such a transformation is due to the generation of a tetragonal zinc silicate. In order to identify the formation mechanism of the zinc silicate and the bottom broadening of the UV band, a depth profile secondary ion mass spectroscopy experiment was carried out. The results show that vast atomic diffusion between the ZnO film and the silicon substrate occurred due to the annealing temperature. Such interdiffusion can create not only a mixed crystal of ZnO and Zn 2 SiO 4 , but also an amorphous silicon dioxide (a-SiO 2) in a deep range from the surface to the interface of the ZnO/Si system. The a-SiO 2 is most probably the source of the 453 nm blue band hidden in the tail of the 390 nm UV band, since the blue band agrees with the CL spectra of the amorphous quartz glass and the thermally oxidized silicon. ZnO film has been widely studied for a variety of applications in piezoelectric acoustic wave devices [1, 2], varistors [3, 4], optical waveguides [5], substrates or buffer layers for the growth of GaN [6, 7], or as a material for light-emitting diodes [8]. In addition, ZnO deposited on silicate glass has been widely used as a transparent conducting oxide buffer in the construction of semiconductor film solar cells [9]. A ZnO/Si heterojunction was also investigated as a candidate for a mono-junction solar cell [10]. Under such conditions, it is necessary to

Phase stability and pressure-induced structural transitions at zero temperature in ZnSiO3and Zn2SiO4

“…As a result, at the interface in the heterostructures of Si/ZnO and SiO 2 /ZnO the Si and Zn related oxides can be formed, which will affect the device performance. Polymorphs of with a focused electron beam irradiation process ZnSiO 3 nanoparticles have been found in a SiO 2 open. Some of them are the systematic study of band gap variation in between the zinc silicates and ZnO(Si) and the ways of controlling them, which would be important to know influence of the interface layer on current transport.…”

The Effect of Substrate Material and Postannealing on the Photoluminescence and Piezo Properties of DC-Sputtered ZnO

“…Zn 2 SiO 4 is the product of the interaction of ZnO with the base substrate (also reported in Ref. 14). The inset graph shows only one sharp peak at 1,000°C annealing temperature.…”

Substrate dependent growth modes of ZnO nanorods grown by metalorganic chemical vapor deposition

“…Vast atomic diffusion between the ZnO layer and the silicon substrate is likely to occur due to the growth temperature of 500 1C during the ZnO nanorod growth of 30 min. Such interdiffusion can create an amorphous silicon dioxide at the interface of the ZnO/Si system [33]. After the formation of the amorphous layer, 3D island growth of ZnO starts on the amorphous layer.…”