Formation mechanism of InxGa1−xAs bridge layers on patterned GaAs substrates

Semicond. Sci. Technol.

Iida

Kumagawa

et al. 2002

A study of the liquid phase epitaxial growth of In x Ga 1−x As (x = 0.06) layers on different types of patterned GaAs(100) substrates has been carried out. The dependence of growth morphology on the stripe orientation of the star patterned trench substrate has been observed. Pyramid layers were grown in the stripes oriented along the 001 direction. Broken tent structures formed along the 012 direction. Pyramidal structured layers looked to grow faster than the tent-like and broken tent-like structures. In order to analyse the hollow pyramid structure growth in detail, they were grown on circular trench substrates for different periods of time. Hollow pyramidal structures of InGaAs have been grown on circular patterned trench substrates. Effective defect filtration can be realized in this kind of growth of hollow pyramidal structures. The formation mechanism of the hollow pyramid structured layers has been studied in detail.

Section: Growth On Circular Trench Substratementioning

confidence: 84%

Study of the formation mechanism of InGaAs pyramidal layers on GaAs(100) patterned substrates by LPE

Semicond. Sci. Technol.

Iida

Kumagawa

et al. 2002

“…In the growth experiment using the line-seed substrate, (111)Aoriented GaAs substrates were also used, in order to investigate the influence of polarity difference. The fabrication processes of these substrates are described elsewhere [15][16][17][18]. The InGaAs growth was carried out on these substrates for different periods of time.…”

Section: Methodsmentioning

confidence: 99%

“…In order to analyse the difference, InGaAs was grown on an 100 line-seed substrate. Normally, when this type of line-seed substrate is used, the growth front of the InGaAs ELO layers can be limited to either {111}A or {111}B [18]. Figure 4(a) shows the laser probe microscope image of an InGaAs ELO layer grown on a 100 line-seed substrate.…”

Section: Coalescence Of the Layers With Different Types Of Growth Fro...mentioning

confidence: 99%

“…To overcome this problem, techniques such as ELO have been adopted. We have already shown that when GaAs trench substrates covered with SiN x masks are used for the growth of In x Ga 1−x As (x = 0.06, 0.10, 0.15), ELO layers and laterally grown layers of In x Ga 1−x As, in the form of bridges over the trench, appear outside and inside the trench, respectively [15][16][17][18][19][20]. In both types of layer, etch pit densities (EPDs) were found to be almost zero.…”

Section: Introductionmentioning

confidence: 99%

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The coalescence of ELO layers of In_xGa_1-xAs grown on patterned (111) GaAs by liquid phase epitaxy

Iida

Semicond. Sci. Technol.

Koyama

et al. 2001

In x Ga 1−x As (x = 0.06) epitaxial lateral overgrown (ELO) layers were grown on (111)B GaAs patterned substrates covered with SiN x masks by liquid phase epitaxy. The thickness of the ELO layer with a {111}A growth front was found to decrease as the growth progressed. On the other hand, for the ELO layer with a {111}B growth front, this kind of decrease of thickness was found to be very small. When the layers with different growth fronts ({111}A and {111}B) coalesced, dislocations were found to be generated. In the case of the coalesced ELO layers which were in constant contact with the basal SiN x mask, the surface became concave due to the decrease of thickness of the layers. This problem of decrease of thickness was not observed when a large enough void structure was present in the grown ELO layers of InGaAs.

“…[12][13][14][15][16] Recently, we have shown that high-quality In x Ga 1Àx As (x ¼ 0:06; 0:10; 0: 15) can be grown in the form of a bridge over patterned GaAs substrates by liquid-phase epitaxy. [17][18][19][20][21][22][23][24] However, it is very difficult to grow In x Ga 1Àx As with higher In compositional ratio on GaAs substrates, because the lattice mismatch is very high. We have proposed a new method to grow In x Ga 1Àx As on an InAs trench substrate.…”

Section: Introductionmentioning

confidence: 99%

Composition Conversion Mechanism of InSb into InGaSb

Hayakawa

Ohtsu

et al. 2003

Jpn. J. Appl. Phys.

The composition conversion mechanism of InSb into InGaSb when an In-Ga-Sb solution was in contact with an InSb substrate was investigated. Striations were formed in the conversion region by passing electric current pulses. This indicated that the solid and the liquid coexisted during the conversion process. After removing the solution from the substrate, the Ga profiles became smoother and deeper with the increase of annealing period and with the decrease of cooling rate. This proved that the Ga could move down into the InSb substrate during these processes. By the direct observation of the movement of the conversion region on an InSb substrate using a high-temperature optical microscope, the appearance of the {111} facet at the moving front of the region was confirmed. The gradual dissolution of InSb led to the formation of In-Ga-Sb solution belt in the substrate and the subsequent crystallization of InGaSb.