In x Ga 1−x As (x = 0.06) epitaxial lateral overgrown (ELO) layers were grown on (111)B GaAs patterned substrates covered with SiN x masks by liquid phase epitaxy. The thickness of the ELO layer with a {111}A growth front was found to decrease as the growth progressed. On the other hand, for the ELO layer with a {111}B growth front, this kind of decrease of thickness was found to be very small. When the layers with different growth fronts ({111}A and {111}B) coalesced, dislocations were found to be generated. In the case of the coalesced ELO layers which were in constant contact with the basal SiN x mask, the surface became concave due to the decrease of thickness of the layers. This problem of decrease of thickness was not observed when a large enough void structure was present in the grown ELO layers of InGaAs.