The coalescence of ELO layers of In_xGa_1-xAs grown on patterned (111) GaAs by liquid phase epitaxy

Abstract

In x Ga 1−x As (x = 0.06) epitaxial lateral overgrown (ELO) layers were grown on (111)B GaAs patterned substrates covered with SiN x masks by liquid phase epitaxy. The thickness of the ELO layer with a {111}A growth front was found to decrease as the growth progressed. On the other hand, for the ELO layer with a {111}B growth front, this kind of decrease of thickness was found to be very small. When the layers with different growth fronts ({111}A and {111}B) coalesced, dislocations were found to be generated. In the case of the coalesced ELO layers which were in constant contact with the basal SiN x mask, the surface became concave due to the decrease of thickness of the layers. This problem of decrease of thickness was not observed when a large enough void structure was present in the grown ELO layers of InGaAs.

Growth and characterization of In0.06Ga0.94Sb pyramidal epilayer

“…4(a). The existence of these lines are due to the coalescence of adjacent faces during growth and this kind of coalescence is a common phenomenon observed in the layers grown by epitaxial lateral overgrowth or related techniques [12,13].…”

Composition Conversion Mechanism of InSb into InGaSb

“…[12][13][14][15][16] Recently, we have shown that high-quality In x Ga 1Àx As (x ¼ 0:06; 0:10; 0: 15) can be grown in the form of a bridge over patterned GaAs substrates by liquid-phase epitaxy. [17][18][19][20][21][22][23][24] However, it is very difficult to grow In x Ga 1Àx As with higher In compositional ratio on GaAs substrates, because the lattice mismatch is very high. We have proposed a new method to grow In x Ga 1Àx As on an InAs trench substrate.…”