Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate

Zhou, Yi; Ahyi, Claude; Isaacs-Smith, T.; Bozack, Michael J.; Tin, C. C.; Williams, John R.; Park, Minseo; Cheng, An-Jen; Park, Jung Hyun; Kim, Dong-Joo; Wang, Dake; Preble, E. A.; Hanser, Α.; Evans, K. R.

doi:10.1016/j.sse.2007.10.045

Cited by 65 publications

(40 citation statements)

References 31 publications

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“…The authors also have observed volume increase of about 40% after oxidation. Similar experiments were made by Zhou et al (Zhou et al, 2008) by oxidation of GaN powder and GaN free-standing substrates with Ga-terminated surface (front side) from HVPE epitaxial processes. They have used dry oxygen as a reactor chamber atmosphere only and have changed time (from 4 to 12 hours) and temperature (850, 900, 950 and 950 °C) of oxidation.…”

Section: Dry Thermal Oxidationsupporting

confidence: 64%

“…Value reported in (Zhou et al, 2008) is of about 10.2. Shan et al (Shan et al, 2005) have measured dielectric constant for thin layers deposited on p-Si (100) and sapphire (0001) substrates by PEALD (Plasma Enhanced Atomic Layer Deposition).…”

Section: Dielectric Constant and Breakdown Fieldmentioning

confidence: 90%

“…The breakdown field/voltage depends significantly on technology of fabrication of the material. Values reported for thermally oxidized layers were 0.05-0.1 MV/cm (Readinger et al, 1999), 0.65 MV/cm (Zhou et al, 2008), 1 MV/cm (Lin et al, 2006) and 3.85 MV/cm (Kim et al, 2001) when those for PEALD were 1-1.5 MV/cm (Shan et al, 2005) and e-beam evaporation 3.6 MV/cm (Passlack et al, 1995). …”

Section: Dielectric Constant and Breakdown Fieldmentioning

confidence: 93%

“…Authors refer to photoluminescence studies to (Hao & Cocivera, 2002), density of interface states (Lin et al, 2005;Lin et al, 2006;Nakano b et al, 2003;Zhou et al, 2008) or oxidation states as well as etching behavior (Passlack et al, 1995).…”

Section: Optical Propertiesmentioning

confidence: 99%

“…In GaN dry oxidation processes one could observe two zones: interfacial reaction-controlled and diffusion-controlled mechanism for low and high temperature, respectively (Zhou et al, 2008). Authors of this paper have wrote about "thermally grown gallium oxide on (...) GaN substrate".…”

Section: Dry Thermal Oxidationmentioning

confidence: 99%

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Wet Thermal Oxidation of GaAs and GaN

Korbutowicz¹,

Prazmowska²

2010

Semiconductor Technologies

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Section: Dry Thermal Oxidationsupporting

confidence: 64%

Section: Dielectric Constant and Breakdown Fieldmentioning

confidence: 90%

Section: Dielectric Constant and Breakdown Fieldmentioning

confidence: 93%

Section: Optical Propertiesmentioning

confidence: 99%

Section: Dry Thermal Oxidationmentioning

confidence: 99%

See 3 more Smart Citations

Wet Thermal Oxidation of GaAs and GaN

Korbutowicz¹,

Prazmowska²

2010

Semiconductor Technologies

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Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga₂O₃/n‐GaN Heterojunction Fabricated by a Reversed Substitution Doping Method

Han

Wang

et al. 2023

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An excellent broad‐spectrum (220–380 nm) UV photodetector, covering the UVA‐UVC wavelength range, with an ultrahigh detectivity of ≈1015 cm Hz1/2 W−1, is reported. It is based on a p‐β Ga2O3/n‐GaN heterojunction, in which p‐β Ga2O3 is synthesized by thermal oxidation of GaN and a heterostructure is constructed with the bottom n‐GaN. XRD shows the oxide layer is (−201) preferred oriented β‐phase Ga2O3 films. SIMS and XPS indicate that the residual N atoms as dopants remain in β Ga2O3. XPS also demonstrates that the Fermi level is 0.2 eV lower than the central level of the band gap, indicating that the dominant carriers are holes and the β Ga2O3 is p‐type conductive. Under a bias of −5 V, the photoresponsivity is 56 and 22 A W−1 for 255 and 360 nm, respectively. Correspondingly, the detectivities reach an ultrahigh value of 2.7 × 1015 cm Hz1/2 W−1 (255 nm) and 1.1 × 1015 cm Hz1/2 W−1 (360 nm). The high performance of this UV photodetector is attributed mainly to the continuous conduction band of the p‐β Ga2O3/n‐GaN heterojunction without a potential energy barrier, which is more helpful for photogenerated electron transport from the space charge region to the n‐type GaN layer.

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Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/βGa₂O₃:N/GaN p‐i‐n Heterojunction Fabricated by a Reversed Substitution Growth Method

et al. 2023

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This work reports a high‐detectivity solar‐blind deep ultraviolet photodetector with a fast response speed, based on a nitrogen‐doped graphene/βGa2O3/GaN p‐i‐n heterojunction. The i layer of βGa2O3 with a Fermi level lower than the central level of the forbidden band of 0.2 eV is obtained by reversed substitution growth with oxygen replacing nitrogen in the GaN matrix, indicating the majority carrier is hole. X‐ray diffractometershows that the transformation of GaN into βGa2O3 with (−201) preferred orientation at temperature above 900 °C in an oxygen ambient. The heterojunction shows enhanced self‐powered solar blind detection ability with a response time of 3.2 µs (rise)/0.02 ms (delay) and a detectivity exceeding 1012 Jones. Under a reverse bias of −5 V, the photoresponsivity is 8.3 A W−1 with a high Ilight/Idark ratio of over 106 and a detectivity of ≈9 × 1014 Jones. The excellent performance of the device is attributed to 1) the continuous conduction band without a potential energy barrier, 2) the larger built‐in potential in the heterojunction because of the downward shift of Fermi energy level in β‐Ga2O3, and 3) an enhanced built‐in electric field in the βGa2O3 due to introducing p‐type graphene with a high hole concentration of up to ≈1020 cm−3.

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Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate

Cited by 65 publications

References 31 publications

Wet Thermal Oxidation of GaAs and GaN

Wet Thermal Oxidation of GaAs and GaN

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga₂O₃/n‐GaN Heterojunction Fabricated by a Reversed Substitution Doping Method

Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/βGa₂O₃:N/GaN p‐i‐n Heterojunction Fabricated by a Reversed Substitution Growth Method

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Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate

Cited by 65 publications

References 31 publications

Wet Thermal Oxidation of GaAs and GaN

Wet Thermal Oxidation of GaAs and GaN

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga2O3/n‐GaN Heterojunction Fabricated by a Reversed Substitution Doping Method

Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/βGa2O3:N/GaN p‐i‐n Heterojunction Fabricated by a Reversed Substitution Growth Method

Contact Info

Product

Resources

About

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga₂O₃/n‐GaN Heterojunction Fabricated by a Reversed Substitution Doping Method

Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/βGa₂O₃:N/GaN p‐i‐n Heterojunction Fabricated by a Reversed Substitution Growth Method