Formation and transformation of ZnTiO3 prepared by sputtering process

Lee, Ying-Chieh; Huang, Yen-Lin; Lee, Wen−His; Shieu, Fuh‐Sheng

doi:10.1016/j.tsf.2010.05.005

Cited by 37 publications

(37 citation statements)

References 16 publications

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“…They are still under extensive studies to fully understand how the incorporation of titanium takes place and how influences the physical properties. Moreover the phase transformation and its effect on optical and dielectric properties of ZnTiO 3 thin films are still under considerable debate [11,12,13] and deserve further experimental consideration.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of zinc titanate perovskite prepared by reactive RF sputtering

Müllerová

Šutta

Medlín

et al. 2017

Journal of Electrical Engineering

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In this paper we report results from optical transmittance spectroscopy complemented with data on structure from XRD measurements to determine optical properties of a series of ZnTiO 3 perovskite thin films deposited on glass by reactive magnetron co-sputtering. The members of the series differ by the titanium content that was revealed as an origin of the changes not only in structure but also in dispersive optical properties. Low porosity has been discovered and calculated using the Bruggeman effective medium approximation. An apparent blue-shift of the optical band gap energies with increasing titanium content was observed. The observed band gap engineering is a good prospective for eg optoelectronic and photocatalytic applications of ZnTiO 3 .

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Section: Introductionmentioning

confidence: 99%

Optical properties of zinc titanate perovskite prepared by reactive RF sputtering

Müllerová

Šutta

Medlín

et al. 2017

Journal of Electrical Engineering

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“…Figure 2 shows the variation of the titanium atomic content (%) in the films obtained by XANES (open circles) and RBS (close circles). For the sake of simplicity, we will use the composition as measured by RBS in the discussion of Figure 2.For the 25 samples deposited with a fixed P Ti = 100W and P Zn < 60 W, there is an abrupt decrease of the titanium content from ~30 ± 1 at% down to ~4.0 ± 0.5 at.%. For higher Zn cathode powers the amount of titanium remains fairly constant around 2.0 at%.…”

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confidence: 99%

“…A similar behaviour, but with a Ti load threshold of 1.3 at.%, has been reported for 500nm 16 43 . According to the above exposed, ZnO samples doped with a 0.5at.% of Ti and thicknesses down to 10nm may be suitable for electronic and optoelectronic devices, 25 solar cells, photoelectrodes, photocatalysts or sensors.…”

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confidence: 99%

Coordination chemistry of titanium and zinc in Ti(1−x)Zn2xO2 (0 ≤x≤ 1) ultrathin films grown by DC reactive magnetron sputtering

et al. 2012

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X-ray Absorption Near Edge Structure (XANES) and Rutherford Backscattering Spectroscopy (RBS) were used to explore the structural phase and composition transitions of ultrathin films with Ti (1-x) Zn 2x O 2 stoichiometries, from very 10 low (~0.5 at.%) to high (~25at.%) titanium content. In this way, the coordination chemistry of Ti 4+ and Zn 2+ cations was examined for a wide range of oxide compositions.Transition metal doping and formation of mixed oxides are 15 widely used mechanisms to improve the intrinsic properties of binary oxides. Both procedures have been decisive to explain the spectacular increase of applications based on ZnO and TiO 2 films. Proven applications of metal-doped ZnO in optoelectronic 20 devices include photovoltaic and dye sensitized solar cells, flat panel displays, photodetectors, gas sensors, light emitting diodes and blue laser diodes [1][2][3][4] . The vast majority of previous work on doped ZnO films is related to doping with group III elements. In particular Al, Ga and In trivalent cations have been extensively 25 used to enhance the n-type conductivity of ZnO films [5][6][7][8][9][10][11] . Fewer studies have been performed on quadrivalent dopants as titanium, which have one more valence than the trivalent cations and can provide two free electrons per atom to improve the conductivity of the ZnO host. In particular the Ti 4+ cation has a slightly smaller 30 radius (6.8 nm) than Zn 2+ (7.4 nm) and, thus, it can act as a suitable donor in ZnO films. Some authors have reported an enhancement of the conductivity in Ti-ZnO (TZO) films for low titanium content (<1.5 at%) [12][13][14][15][16] . However, the conduction mechanism of the metal-semiconductor transition in ZnO is still unclear [17][18] . In turn, ZnO-TiO 2 mixed oxides have been widely studied to be used as gas sensors [19][20] inverse spinel crystal structure with a unit cell a = 0.846 nm), zinc meta-titanate ZnTiO 3 (either cubic inverse defect spinel, a = 0.840 nm or hexagonal ilmenite structure, a = 0.507 nm) and Zn 2 Ti 3 O 8 (cubic inverse defect spinel, a = 0.843 nm) are still under debate 27-29 . 50 Despite the extensive studies performed on the individual TZO and ZnO-TiO2 systems in areas such as photovoltaics, photocatalysis or optoelectronics, there is a lack of a systematic work to fully understand how the Ti incorporation takes place in the ZnO oxide structure either as dopant or to form mixed oxides. 55In particular, one of the current technological challenges is the elucidation of such mechanism for nanostructured and ultrathin films due to the size-dependent electronic and optical properties of these semiconductor materials, as discussed in ref. O (α, α) 16 O at that particular energy and, therefore, to improve the sensitivity to oxygen. The chemical composition values have been extracted using the RBX software 34 . The X-ray Absorption Near Edge Structure (XANES) measurements were done at the PM4 beamline of the Bessy II 95 synchrotron facility (Berlin, Germany), using the SurICat endstation. Th...

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“…Photo-anodic rutile TiO 2 nanorods with enhanced light-to-electricity conversion efficiency were grown on transparent conductive substrates using a facile hydrothermal method (Liu & Aydil, 2009). and cubic spinel Zn 2 TiO 4 (Lee et al, 2009). Inaguma et al (2014) reported a LiNbO 3 -type ZnTiO 3 phase synthesised under high pressure and high temperature conditions.…”

Section: Introductionmentioning

confidence: 99%

Freeze-drying synthesis and characterisation of Na composites of ZnO, TiO2 and ZnTiO3 semiconductor oxides

et al. 2015

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The freeze-drying method of metal oxides synthesis has a number of advantages such as high homogeneity, varying porous structures, morphologies and uniform particle size distribution, etc. Because of these advantages, the binary metal oxides ZnO, TiO2 and ternary metal oxide ZnTiO3 were synthesised by the freeze-drying method. The synthesised materials were characterised by X-ray diffraction (XRD), Fourier transform-infra red spectroscopy (FT-IR), UV-VIS spectroscopy, scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX). The as-synthesised metal oxides were calcined at different temperatures to study the phase evolution and morphological changes. The crystalline cubic-phase ZnTiO3 (a = 8.3948Å) was obtained on calcination of the precursor at 600 • C, and decomposed to the cubic phase Zn2TiO4 (a = 8.4580Å) and rutile TiO2 (a = 4.5955Å and c = 2.9593Å) at 1000 • C. The band gap of ZnO (3.28-3.10 eV), TiO2 (3.37-2.97 eV) and ZnTiO3 (3.92-3.80 eV) calculated using Tauc's relation was found to vary inversely with calcination temperature and phase transition. Prasad et al. (2010) reported the synthesis of 100 % nanostructured rutile TiO 2 by a combined ultrasoundassisted sol-gel technique. The zinc titanate system is an interesting system, having different polymorphic phases such as cubic defect spinel Zn 2 Ti 3 O 8 , cubic inverse spinel ZnTiO 3 , hexagonal-ilmenite type ZnTiO 3

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Formation and transformation of ZnTiO3 prepared by sputtering process

Cited by 37 publications

References 16 publications

Optical properties of zinc titanate perovskite prepared by reactive RF sputtering

Optical properties of zinc titanate perovskite prepared by reactive RF sputtering

Coordination chemistry of titanium and zinc in Ti(1−x)Zn2xO2 (0 ≤x≤ 1) ultrathin films grown by DC reactive magnetron sputtering

Freeze-drying synthesis and characterisation of Na composites of ZnO, TiO2 and ZnTiO3 semiconductor oxides

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